A 22&amp;#x2013;39 GHz Passive mixer in SiGe:C bipolar technology

Issakov, Vadim; Knapp, H.; Wojnowski, Maciej; Thiede, A.; Simbuerger, W.

doi:10.1109/mwsym.2010.5514827

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…In many SiGe HBT technologies, there are no diodes available. Using the base–emitter junction of the high-speed HBTs available as a pn-junction diode [6], it is possible to have good mixer diodes in a SiGe HBT technology. The design description is divided into three parts covering the design of the balun, the intermediate frequency (IF) extraction and the mixer core.…”

Section: Designmentioning

confidence: 99%

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Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

Michaelsen

Johansen

Tamborg³

et al. 2014

Int. J. Microw. Wireless Technol.

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In this paper, a passive double-balanced mixer in SiGe HBT technology is presented. Owing to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode-connected HBTs. The mixer uses lumped element Marchand baluns on both the local oscillator (LO) and the radio frequency (RF) port. A break out of the Marchand balun is measured. This demonstrates good phase and magnitude match of 0.7° and 0.11 dB, respectively. The Marchand baluns are broadband with a measured 3 dB bandwidth of 6.4 GHz, while still having a magnitude imbalance better than 0.4 dB and a phase imbalance better than 5°. Unfortunately with a rather high loss of 2.5 dB, mainly due to the low Q-factor of the inductors used. The mixer is optimized for use in doppler radars and is highly linear with a 1 dB compression point above 12 dBm IIP2of 66 dBm. The conversion gain at the center frequency of 8.5 GHz is −9.8 dB at an LO drive level of 15 dBm. The whole mixer is very broadband with 3 dB bandwidth from 7 to 12 GHz covering the entire X-band. The LO–IF, RF–IF, and RF–LO isolation is better than 46, 36, and 36 dB, respectively, in the entire band of operation.

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Section: Designmentioning

confidence: 99%

“…As the SiGe HBT process used for implementation do not offer suitable diodes for mixing, diode-connected HBTs as in [6] are used.…”

Section: Introductionmentioning

confidence: 99%