2009 Asia Pacific Microwave Conference 2009
DOI: 10.1109/apmc.2009.5385432
|View full text |Cite
|
Sign up to set email alerts
|

A 22-30GHz balanced SiGe BiCMOS frequency doubler with 47dBc suppression and low input drive power

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 9 publications
0
4
0
Order By: Relevance
“…It can be noted that the CMOS-based technology shows the least conversion loss. However, the CMOS circuits use an intermittent amplifier stage to boost up the harmonic power level and suppress other undesired frequencies [ 43 , 44 ]. The Schottky diode, such as HSMS2850 in [ 45 ] and BAT1503 in [ 30 ], showed a decent conversion loss up to input power as low as −10 dBm.…”
Section: Harmonic Generationmentioning
confidence: 99%
See 2 more Smart Citations
“…It can be noted that the CMOS-based technology shows the least conversion loss. However, the CMOS circuits use an intermittent amplifier stage to boost up the harmonic power level and suppress other undesired frequencies [ 43 , 44 ]. The Schottky diode, such as HSMS2850 in [ 45 ] and BAT1503 in [ 30 ], showed a decent conversion loss up to input power as low as −10 dBm.…”
Section: Harmonic Generationmentioning
confidence: 99%
“…As both the FETs are biased using the same DC current, the current reused frequency multiplier configuration consumes less power. Another popular architecture is Gilbert cell-based configuration, where nonlinearity from the FETs are utilized for harmonic generation [ 43 ]. Although power consumption rises, avoidance of inductors helps in realizing a smaller cell size for Gilbert cell-based multipliers.…”
Section: Harmonic Generationmentioning
confidence: 99%
See 1 more Smart Citation
“…The transformer balun can divide an input single‐ended signal into differential signals, and the transformer balun has three capacitors for power transfer. This transformer balun, which has a compact size compared to the Marchand balun , is designed using electromagnetic (EM) simulation that replicated accurate environment setup as used 65 nm CMOS process. Furthermore, EM simulation is used to design entire circuit for more accurate fabrication as simulation results, except for NMOSs and capacitors.…”
Section: Circuit Designmentioning
confidence: 99%