A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology

Vazquez, Pedro Rodriguez; Grzyb, Janusz; Sarmah, Neelanjan; Heinemann, B.; Pfeiffer, Ullrich R.

doi:10.23919/eumic.2017.8230709

Cited by 22 publications

(7 citation statements)

References 8 publications

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“…A frequency doubler circuit, called a square mixer since input signals are squared, is used for this mixer. Figure 5 shows the transmitter architecture using a square mixer [16]. If the frequencies of the two superimposed signals are close to each other, the two signals can be simultaneously amplified by the identical amplifier.…”

Section: Ghz Band Transmitter Using Silicon Integrated Circuitmentioning

confidence: 99%

“…Furthermore, in recent receivers of SiGe integrated circuits, by using a 300 GHz band driver amplifier as an LO signal, it is possible to improve the conversion gain of the fundamental mixer and to remove the low-noise amplifier. As a result, conversion gain of +7 dB and a noise figure of 17 dB are realized without a low-noise amplifier [16]. In a receiver of a CMOS integrated circuit, however, since a low-noise amplifier cannot be used as shown in Figure 8b, the down conversion mixer must be used for the first stage.…”

Section: Ghz Band Receiver Using Silicon Integrated Circuitmentioning

confidence: 99%

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Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Fujishima

2018

Photonics

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In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

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Section: Ghz Band Transmitter Using Silicon Integrated Circuitmentioning

confidence: 99%

Section: Ghz Band Receiver Using Silicon Integrated Circuitmentioning

confidence: 99%

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Fujishima

2018

Photonics

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“…As the cut-off frequency (f T ) and the maximum frequency of oscillation (f max ) of the silicon-based transistors continue to improve, silicon-based technologies are seriously considered suitable for designing fully integrated sub-THz transceivers that can significantly reduce cost, effort, and time to market. Recent demonstrations of sub-terahertz technology have included complete transceivers for communication links [8][9][10][11][12][13][14][15], single transmitters [16,17], and receiver designs [18][19][20][21]. Using push-pull subharmonic mixer architecture, a 300 GHz CMOS transceiver could reach 34 Gb/s of data transmissions [8].…”

Section: Introductionmentioning

confidence: 99%

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

2022

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This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz amplifier consists of 14 stages of the cascaded common emitter (CE) amplifier which offers a compact and improved-noise design due to the absence of the area-expensive and lossy baluns at such high frequencies. The interstage-matching network was flexibly constructed with two separate resonant tanks using metal–insulator–metal (MIM) capacitors and microstrip transmission lines (MSTLs) between each stage. The measured amplifier achieved a peak power gain of 10.9 dB at 283 GHz and a 3 dB gain of bandwidth of 30 GHz between 270 and 300 GHz. The peak output power of the amplifier was 0.8 dBm with an output of 1 dB gain compression point (OP1dB) of -3.6 dBm in simulation. The 14-stage amplifier consumes an area of 0.213 mm2, including all the pads. With the proposed interstage matching approach, a well-balanced 280 GHz amplifier has been demonstrated. The proposed design strategy is widely applicable to sub-THz receivers for future wireless communication systems.

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“…An ISM band at 245 GHz is available in Europe, which could be used for imaging radar [1,2] , security applications, bio-medical sensors for medical diagnostics, mm-wave gas spectroscopy [3][4][5][6] , as well as communication [7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

“…[3,4], a receiver consisting of a 245 GHz folded dipole antenna, a 245 GHz differential transformer coupled LNA, a Gilbert-cell based subharmonic mixer (SHM), and a 120 GHz VCO-divider chain is presented for 245 GHz gas spectroscopy applications. The same 245 GHz receiver is well utilized in a 245 GHz gas sensor [5] and gas spectroscopy system for breath analysis [6] . In Ref.…”

Section: Introductionmentioning

confidence: 99%

245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

et al. 2018

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A 2nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB (common base) LNA, a 2nd transconductance SHM (subharmonic mixer), and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in fT/fmax = 300/500 GHz SiGe:C BiCMOS technology. The receiver dissipates a low power of 288 mW. Integrated with the on-chip antenna, the receiver is measured on-chip with a conversion gain of 15 dB, a bandwidth of 15 GHz, and the chip will be utilized in PCB board design for gas spectroscopy sensor application.

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A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology

Cited by 22 publications

References 8 publications

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

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