A 200 °C Universal Gate Driver Integrated Circuit for Extreme Environment Applications

Huque, M.A.; Islam, Syed K.; Tolbert, Leon M.; Blalock, Benjamin J.

doi:10.1109/tpel.2012.2187934

Cited by 50 publications

(21 citation statements)

References 21 publications

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“…The blocks include a pulse controller, a level-shifter, a bootstrap/charge-pump circuit, a logic latch, buffers, and an output stage. These type of gate drivers are reported in [1]- [4], and are also seen in some commercial products, such as Themis & Atlas from Cissoid. In order to provide sufficient driving current, an NMOS half-bridge is often used at the output stage and it utilizes a bootstrap/chargepump and level-shifter circuits.…”

Section: Non-isolated Gate Drive Circuitsmentioning

confidence: 79%

“…In order to optimize the switching performance, gate drive circuits need to sit as closely as possible to the devices and hence high-temperature tolerance is required. Some hightemperature gate-drive solutions are commercially available [1], but they are insufficient to drive large power modules and they lack the flexibility and compactness to fit into different types of applications. This paper reviews a number of hightemperature high-frequency gate-drive topologies, including isolated and non-isolated circuits.…”

Section: Introductionmentioning

confidence: 99%

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High temperature gate drive circuits for silicon carbide switching devices

Wang¹,

Krishnamurthy²

2013

2013 IEEE Energy Conversion Congress and Exposition

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This paper examines various topologies for the gate-drive circuit for power semiconductors used in high-frequency high-temperature applications. Particular emphasis is placed on transformer-isolated topologies and their implementation using commercially available hightemperature components. Low temperature circuits are built and tested for all candidate configurations. One candidate topology was chosen and built in the high temperature form using commercially available high temperature parts and tested at temperatures up to 200°C.

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Section: Non-isolated Gate Drive Circuitsmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

High temperature gate drive circuits for silicon carbide switching devices

Wang¹,

Krishnamurthy²

2013

2013 IEEE Energy Conversion Congress and Exposition

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“…In many applications, the gate driver is a simple CMOS inverter (i.e., a couple of a P-MOS, acting as a pull-up transistor, and an N-MOS, acting as a pull-down transistor with common input and output signals) with a size to have a current capability high enough to drive the input gate capacitance of the power FET at the desired switching frequency. In automotive applications, instead, constraints on power dissipation and electromagnetic emissions make the design of this block much more challenging [18]. In our design, electromagnetic emissions are reduced by minimizing the cross conduction.…”

Section: Slope Controlling Of the Power Fet Gate Drivermentioning

confidence: 99%

Hard macrocells for DC/DC converter in automotive embedded mechatronic systems

et al. 2016

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A novel configurable DC/DC converter architecture, to be integrated as hard macrocell in automotive embedded systems, is proposed in the paper. It aims at realizing an intelligent voltage regulator. With respect to the state of the art, the challenge is the integration into an automotive-qualified chip of several advanced features like dithering of switching frequency, nested control loops with both current and voltage feedback, asynchronous hysteretic control for low power mode, slope control of the power FET gate driver, and diagnostic block against out-of-range current or voltage or temperature conditions. Moreover, the converter macrocell can be connected to the invehicle digital network, exchanging with the main vehicle control unit status/diagnostic flags and commands. The proposed design can be configured to work both in step-up and step-down modes, to face a very wide operating input voltage range from 2.5 to 60 V and absolute range from −0.3 to 70 V. The main target is regulating all voltages required in the emerging hybrid/electric vehicles where, besides the conventional 12 V DC bus, also a 48 V DC bus is present. The proposed design supports also digital configurability of the output regulated voltage, through a programmable divider, and of the coefficients of the proportional-integrative controller inside the nested control loops. Fabricated in 0.35 μm CMOS technology, experimental measurements prove that the IC can operate in harsh automotive environments since it meets stringent requirements in terms of electrostatic discharge (ESD) protection, operating temperature range, out-of-range current, or voltage conditions.

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“…For example, combustion engine and traction motor in HEV elevate ambient temperature up to 150°C and require water cooling system to dissipate energy from the converter power unit [14]. The SiC advanced thermal capabilities are therefore of great potential to reduce cooling costs and simplify overall construction.…”

Section: Sic Mosfet Advantages In Automotive Motor Drive Applicatmentioning

confidence: 99%

SiC MOSFETs in automotive motor drive applications and integrated driver circuit

Vrtovec

Trontelj

2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application are presented. Furthermore, SiC MOSFET driving requirements are described and a driving concept based on a SiC integrated circuit (IC) is presented. The SiC IC is comprised of components available in recently presented target technology -SiC depletion and enhancement mode MOSFETs, polysilicon and diffusion resistors.

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A 200 °C Universal Gate Driver Integrated Circuit for Extreme Environment Applications

Cited by 50 publications

References 21 publications

High temperature gate drive circuits for silicon carbide switching devices

High temperature gate drive circuits for silicon carbide switching devices

Hard macrocells for DC/DC converter in automotive embedded mechatronic systems

SiC MOSFETs in automotive motor drive applications and integrated driver circuit

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