A 20-W Wide Bandwidth GaN HEMT Power Amplifier for VHF/UHF Applications

Kim, Jusung; Kim, Young-Hoon; Oh, Seongwon; Choi, Jaehyung; Lee, Dong‐Ho; Cho, Kunhee; Lee, Sang-Hun; Ahn, Chi‐Hyung

doi:10.1109/tie.2019.2960749

Cited by 15 publications

(6 citation statements)

References 15 publications

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“…In order to balance the applicability and complexity of the model, the inputs A 11 , A 21 and A 22 , which have a big impact on the RF and DC behavior of the transistor, are taken into consider in this work, and the remaining inputs are ignored. To explain the extraction methodology, the port 2 fundamental scattered wave B 21 is used as an example by ( 9)- (11).…”

Section: Model Extraction Methodologymentioning

confidence: 99%

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Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

Tang

Cai

2022

Int J RF Mic Comp-Aid Eng

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In this work, a harmonic included canonical piecewise linear (CPL) function based quadratic poly-harmonic distortion (QPHD) model is presented. The proposed model employs the framework of the standard QPHD model, making use of the CPL functions for interpolation of the amplitude of the dominant input signal. Compared with the standard QPHD model, the model described in this work is able to predict transistor behavior at different levels of input powers with one single set of model coefficients. The harmonic information has also been added in this model to make it more complete. The model is validated in terms of both DC and RF behavior through simulated data of a 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) over a wide range of load conditions and power levels. In addition, the model is implemented in advanced design system (ADS) with frequency-defined device (FDD), and applied for a broadband power amplifier (PA) design. Chebyshev low-pass topology is used for both input and output matching network design. Finally, a broadband PA is implemented with an average power added efficiency of 66.23%, an average power of 41.09 dBm, and an average gain of 13.09 dB across the operating frequency range from 0.6 to 1.7 GHz. The simulation results of the harmonic included CPL-QPHD model are highly matched with the measurement results of the designed PA, demonstrating the feasibility of applying the proposed model for broadband PA design.

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Section: Model Extraction Methodologymentioning

confidence: 99%

“…There are many recent reports of GaN-based circuits and systems showing excellent performance, especially for PAs. [2][3][4][5][6][7][8][9][10][11] As the performance of PAs is pushed to the physical limits, the requirement for highly accurate GaN models is now stronger than ever.…”

Section: Introductionmentioning

confidence: 99%

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

Tang

Cai

2022

Int J RF Mic Comp-Aid Eng

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“…A 10W power amplifier achieved an output power level of 42.03dBm at 2.4GHz [9]. In one application of a GaN based amplifier also achieved a highly efficient and stable design which attained 35dBm output power with a wide band of 30 to 500MHz [11]. In another work, GaN material based amplifier achieved an output power level of 20W for radio frequency applications [7].…”

Section: Related Workmentioning

confidence: 99%

GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz

Hussain

Mir

2021

Mehran Univ. res. j. eng. technol.

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The next-generation wireless communication systems including satellite, radar, and mobile communications need application-specific power amplifiers that can operate at very high frequencies and high power with the overall minimum power consumption from the system. To meet such stringent requirements there is a rising interest in amplifier designs based on GaN transistors. This paper presents an improved design of a high power amplifier based on GaN HEMT transistor operating at the frequency band 5GHz – 7GHz with optimized output power level. The presented design is based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript, we have considered the stability of the amplifier for the whole operating frequency band, its input and output matching impedance, gain, and maximum output power. The design of the Radio Frequency (RF) power amplifier and its overall performance are carried out using an advanced design system (ADS). The simulation results of the device stability and the output power level achieved provides a good comparison with the parameters and specifications of the device used. For better correlations in the simulation results and measurements, the accuracy of passive element designs are also considered. The simulation and experiment results show that the designed high power amplifier has achieved an output power level of 44.5 dBm at 1 dB compression point.

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“…Group III-nitride materials have garnered significant attention in the research field of compound-semiconductor electronics and optoelectronics due to their large direct bandgap and other excellent physical properties [1][2][3][4][5][6][7][8]. In particular, the photoelectric characteristics of InGaN/GaN multiple quantum wells (MQWs) have been investigated intensively, as they are widely used as the active materials of light-emitting devices for the applications of white-light illumination and color display [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

et al. 2022

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The optical properties of InGaN/GaN violet light-emitting multiple quantum wells with different thicknesses of GaN quantum barriers are investigated experimentally. When the barrier thickness decreases from 20 to 10 nm, the photoluminescence intensity at room temperature increases, which can be attributed to the reduced polarization field in the thin-barrier sample. However, with a further reduction in the thickness to 5 nm, the sample’s luminescence intensity decreases significantly. It is found that the strong nonradiative loss process induced by the deteriorated crystal quality and the quantum-tunneling-assisted leakage of carriers may jointly contribute to the enhanced nonradiative loss of photogenerated electrons and holes, leading to a significant reduction in photoluminescence intensity of the sample with nanoscale ultrathin GaN quantum barriers.

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A 20-W Wide Bandwidth GaN HEMT Power Amplifier for VHF/UHF Applications

Cited by 15 publications

References 15 publications

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

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