A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology

Kraus, S.; Kallfass, Ingmar; Makon, R. E.; Driad, R.; Moyal, M.; Ritter, D.

doi:10.1109/tmtt.2011.2104974

Cited by 8 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some sensitivity enhancement techniques have been used in Ref. [8], such as introducing peaking inductors and using emitter degeneration resistors. The sensitivity of our comparator is fairly good, but inferior to Refs.…”

Section: Measurements and Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A 20-GHz ultra-high-speed InP DHBT comparator

Zhenxing¹,

Zhou²,

Su³

et al. 2012

J. Semicond.

View full text Add to dashboard Cite

An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 1.04 mm 2 . It consumes 440 mW from a single -4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.

show abstract

Section: Measurements and Resultsmentioning

confidence: 99%

“…The sensitivity of our comparator is fairly good, but inferior to Refs. [2,8] at a similar sampling rate. To the best of our knowledge, the comparator in Ref.…”

Section: Measurements and Resultsmentioning

confidence: 99%

A 20-GHz ultra-high-speed InP DHBT comparator

Zhenxing¹,

Zhou²,

Su³

et al. 2012

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…Nickel chromium (NiCr) thin film resistors are popular in InP technology in particular, since many monolithic integrated circuits for InP-based amplifier and high-speed applications need these passive elements on-chip [1,2]. Together with TaN resistors, NiCr resistors are most commonly used in ICs.…”

Section: Introductionmentioning

confidence: 99%

NiCr thin film resistor integration with InP technology

Bloch

Mistele

Brener

et al. 2011

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

We present a study of nickel chromium (NiCr) thin film resistors deposited on InP substrate. In contrast to previously published work, the NiCr film resistance changes by a factor of 2.5 after temperature exposure to 250 • C in air. In order to explain this effect, XPS and SIMS tests were performed on NiCr films as-deposited and with temperature treatment. Annealed samples show strong in and out diffusion of Ni and In, respectively. Interfacial reactions were described explaining the severe resistivity decrease. As a solution, a SiN diffusion barrier between NiCr and InP is proposed and applied.

show abstract

A low power 20 GHz comparator in 90 nm COMS technology

Tang¹,

Meng²,

Wang³

et al. 2014

J. Semicond.

View full text Add to dashboard Cite

A low power 20 GHz CMOS dynamic latched regeneration comparator for ultra-high-speed, low-power analog-to-digital converters (ADCs) is proposed. The time constant in both the tracking and regeneration phases of the latch are analyzed based on the small signal model. A dynamic source-common logic (SCL) topology is adopted in the master-slave latch to increase the tracking and regeneration speeds. Implemented in 90 nm CMOS technology, this comparator only occupies a die area of 65 150 m 2 with a power dissipation of 14 mW from a 1.2 V power supply. The measurement results show that the comparator can work up to 20 GHz. Operating with an input frequency of 1 GHz, the circuit can oversample up to 20 Giga-sampling-per-second (GSps) with 5 bits resolution; while operating at Nyquist, the comparator can sample up to 20 GSps with 4 bits resolution. The comparator has been successfully used in a 20 GSps flash ADC and the circuit can be also used in other high speed applications.

show abstract

A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology

Cited by 8 publications

References 21 publications

A 20-GHz ultra-high-speed InP DHBT comparator

A 20-GHz ultra-high-speed InP DHBT comparator

NiCr thin film resistor integration with InP technology

A low power 20 GHz comparator in 90 nm COMS technology

Contact Info

Product

Resources

About