A 2 million transistor digital processor with 120 nm gates fabricated by 248 nm wavelength phase shift technology

Watson, George; Kizilyalli, I.C.; Miller, M.; Wang, Y. T.; Pati, Bhabana; Cirelli, Raymond A.; Nalamasu, O.; Radosevich, J.; Kohler, R.A.; Freyman, R.; Baumann, F.; Klemens, F.; Mansfield, William; Vaidya, H.; Frackoviak, J.; Timko, Allen G.; Barr, D.; Bolan, K.

doi:10.1016/s0167-9317(00)00273-2

Cited by 2 publications

(2 citation statements)

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“…Specifically, the dark-field alternating aperture phase-shift mask (AAPSM) technology enabled the extension of 248nm lithography to 130nm generation of integrated circuits and beyond. 1,2 Due to existing challenges and the delay in introduction of 157nm lithography and NGL, AAPSMbased 193nm lithography is currently considered as a leading candidate for the 65nm technology node. Alternating aperture PSM imaging has excellent performance characteristics due to the high image contrast and the small mask error enhancement factor (MEEF), which result in a superior process latitude and cross-field CD uniformity.…”

Section: Introductionmentioning

confidence: 99%

Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology

Kroyan¹,

Liu²

2002

SPIE Proceedings

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Over recent years, there has been a number of publications generally describing and characterizing the image imbalance phenomenon in phase shifting masks. In this work, we concentrate on the evaluation of various alternating aperture PSM design parameters and their impact on image imbalance in the context of the 65nm technology node. The study is based on rigorous electro-magnetic field (EMF) simulation of light scattering in 3D mask topographies using EM-Suite software from Panoramic Technology. Among evaluated design parameters are: Cr feature size, pattern pitch, shifter width bias, shifter height, and undercut size. Additionally, the correlation between the mask parameters and image imbalance is examined as a function of optical settings such as NA, sigma, defocus and the image threshold level.

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Section: Introductionmentioning

confidence: 99%

Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology

Kroyan¹,

Liu²

2002

SPIE Proceedings

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“…Devices with sub-100nm transistor gates produced with DUV 248nm lithography in conjunction with double-exposure dark-field strong phase-shifting mask have been reported. 1,2 Last year, the technology was also extended to patterning transistor gates down to 50nm and 25nm, (one-tenth of the wavelength of the exposure tool) by researchers from MIT Lincoln Labs. 3,4 Since the previous works were based on 0.25 µm and 0.18µm generation design rules the pitches are relatively large.…”

Section: Introductionmentioning

confidence: 99%

Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-μm VLSI manufacturing

Wang

Lai

Huang³

et al. 2001

SPIE Proceedings

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We have developed an 80nm poly gate patterning process for 0.13µm VLSI manufacturing using 248nm lithography with double-exposure phase-shifting technique. We show that: Systematic intra-field line width variation can be controlled within 6nm (3σ), and total wafer variation across the wafer held to within 10nm (3σ), with good line-end shortening control for gate endcaps. The k1 factor is < 0.2 (80nm target gate length in 320nm pitch).

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A 2 million transistor digital processor with 120 nm gates fabricated by 248 nm wavelength phase shift technology

Cited by 2 publications

References 1 publication

Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology

Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology

Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-μm VLSI manufacturing

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