A 2.4 GHz Low Power Low Phase-Noise Enhanced FOM VCO for RF Applications Using 180 nm CMOS Technology

Sachan, Divyesh; Kumar, Harshbardhan; Goswami, Manish; Misra, Prasanna Kumar

doi:10.1007/s11277-018-5695-4

Cited by 9 publications

(2 citation statements)

References 8 publications

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“…At a 1 MHz offset, the GFET-based LC oscillator has the lowest FoM, while CMOS performs the best. According to [45], the significantly lower FoM is due to the higher power consumption. Hence, it is understandable that the GFET LC oscillator has the lowest FoM as it cannot be turned off due to the graphene characteristic, which has zero bandgap, leading to high power consumption.…”

Section: A Oscillatorsmentioning

confidence: 99%

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Section: A Oscillatorsmentioning

confidence: 99%

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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“…In [ [7] [10]], phase noise reduction in LC oscillator using tail current shaping is achieved with two extra transistors with RC network. In [ [11]], a 2.4GHz LC oscillator is proposed with tail current biasing and gate resistance matching techniques to reduce phase noise. A diode connected load with tail current source biasing is proposed to reduce phase noise in comparison with nMOS, pMOS and CMOS VCO.…”

Section: Introductionmentioning

confidence: 99%

Phase Noise Reduction Technique for ISM Band LC Oscillator Using Tail Current

Thakore¹,

Shah²,

Devashrey

2021

Wseas Transactions on Electronics

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This paper presents low phase noise, precise frequency tuning range LC Voltage controlled Oscillator (VCO) circuit of Phase lock loop, to support - IEEE 802.11a/b/g, Bluetooth, Zigbee and IEEE 802.15.4., operating on 2.4GHz ISM band (Industrial, Scientific, Medical). The presented circuit is implemented in Cadence virtuoso environment and using GPDK090 Library of 90nm CMOS Technology. The presented VCO is tuned at 2.4GHz frequency with tuning range of 80MHz. The measured Phase noise is -126.3dBc/Hz at 1MHz offset frequency. The total power consumption of the presented VCO is 4.7mw at 1V power supply.

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Component-Related Phase Noise Evaluation Method for the LC Oscillators

Bilgehan¹,

Sabuncu²

2023

Circuits Syst Signal Process

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A 2.4 GHz Low Power Low Phase-Noise Enhanced FOM VCO for RF Applications Using 180 nm CMOS Technology

Cited by 9 publications

References 8 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Phase Noise Reduction Technique for ISM Band LC Oscillator Using Tail Current

Component-Related Phase Noise Evaluation Method for the LC Oscillators

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