A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch

Abstract

This paper describes the design and experimental results of a 1.8-V single-chip CMOS MMIC front-end for 2.4-GHz band short-range wireless communications, such as Bluetooth and wireless LANs. The IC consists of fundamental RF building circuits-a power amplifier (PA), a low-noise amplifier (LNA), and a transmit/receive-antenna switch (SW), including almost all on-chip matching elements. The IC was fabricated using a 0.18-m standard bulk CMOS technology which has no extra processing steps to enhance the RF performances. Two new circuit-design techniques are introduced in the IC in order to minimize the insertion loss of the SW and realize a higher gain for the PA and LNA despite the utilization of the standard bulk CMOS technology. The first is the derivation of an optimum gate width of the SW to minimize the insertion loss based on small-signal equivalent circuit analysis. The other is the revelation of the advantages of interdigitated capacitors (IDCs) over conventional polysilicon to polysilicon capacitors and the successful use of the IDCs in the LNA and PA. The IC achieves the following sufficient characteristics for practical wireless terminals at 2.4 GHz and 1.8 V: a 5-dBm transmit power at a 1-dB gain compression, a 19-dB gain, an 18-mA current for the PA, a 1.5-dB insertion loss, more than 24-dB isolation, an 11-dBm power handling capability for the SW, a 7.5-dB gain, a 4.5-dB noise figure, and an 8-mA current for the LNA.

Low-energy CMOS common-drain power amplifier for short-range applications

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An Ultra-Wideband Low-Noise Amplifier for 3-5-GHz Wireless Systems

“…To put the system in the unconditionally stable region, one can add a series resistor or a shunt conductance to the input or output port [6]. Adding a series resistor will increase the output noise, due to the thermal noise of the resistor in the signal path.…”

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

“…Yamamoto et al (2001) illustrated the basic concerns for the improved performance of a classic series-shunt-type T/R switch whereby only the optimization of the MOS-gate width has occurred [4]. Although the design exhibited a low isolation and a low power-handling capacity, the area of the total chip is large due to the use of large CMOSs.…”