A 2-32 GHz coplanar waveguide InAlAs-InGaAs-InP HBT cascode distributed amplifier

Kobayashi, K.W.; Cowles, J.; Tran, L.; Block, T.; Oki, A.K.; Streit, D.C.

doi:10.1109/mwsym.1995.406062

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…The return-losses arc 2 15 dB across most of the band and indicate good SOR synthcsizcd input and output transmission lines. In comparison to a previous design using non-base uridercuf HBTs which resulted in 5.5 dB gain and only a 2-32 GHz BW [3], the base undercut results demonstrate an 18 GHz or a 56 8 improvement in gain-bandwidth response. This is due to both the improved base undercut device performance and t hme use of a larger cascodc feedback resistor.…”

Section: Introductioncontrasting

confidence: 56%

“…Improvements in dcvicc f,,,,, performance due to base-undercut techniques have also rcccntly been reported for AIGaAs/GaAs HBTs [9]. The direct impact on device maximum available gain performance can be observed from the simple equation for f,,, given below: 3 illustratcs the fT and f,,,, performance improvement of a 1x4 pm HBT with base-undercut compared to a non-undercut device. A peak fT and f,,,, (from MAG) of 55 GHz and 100 GHz is achieved with the base undercut dcviccs and occurs at an lCc 2 3.5 mA, corresponding to a current density of J,= SS kA/cni'.…”

Section: Introductionmentioning

confidence: 98%

“…A negative feedback configuration is essential for stabilizing the high gain cascode HBTs. The cascode fccdback resistor R, used in this design is -600 R and is the main design change from [3] in addition to using the HBT undercutdcviccs with improved frequency perforinunce. The significantly higher cascodc feedback resistance as well as the higher device performancc achieved froiii the base-undercut both strongly coiitributc to the significantly higher amplifier ' bandwidth pcrlorlnnncc nchicvcd ill this work.…”

Section: Introductionmentioning

confidence: 99%

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A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier

Kobayashi¹,

Cowles²,

Block³

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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A B S T R A C THere we report on a 2-50 GHz InAIAs/lnGaAs-ImP HUT Distributed Amplifier (DA) which demonstrates th.e highest frequency of operation so far reported for a wideband H U T amplifier and is ? 10 G H z ( 2 5 % ) improvement over previous state-of-the-art [ 1],[2]. 'Ihe amplifier features 1x4 pni2 single-emitter HBTs with a base under-cut structure for reducing the device's collector-base capacitance CI,E, resulting i n as much as a 20% improvement in device f,,,,, perforniance. 'I'he RIIRIIC is a 5-section . coplanar wave-guide distributed amplifier design which eniploys IIU'I cascode devices. I'revious work using non-undercut HBTs has resulted i n 5.5 dU gain and 2-32 G H z B\V perforniancc[3]. In the present work, the HUT DA obtains a peak gain of 6 . 3 dig with a bandwidth beyond 50 GHz while operating from a 4V supply and consuming only 8Y nil$' of d c plower. The gain is 4.1 dU a t 30 GHz, 3.9 d B at -10 GHz and 4 dU a t 50 GHz. An open circuit transimpedance of 4.5 dU-R calculated froni Spiarameters is achieved with a n upper band edge of > 5 0 GHz. The corresponding effective 50-R loaded transimpedance is 39.2 dU-R which also has a n upper b:and edge of > 50 GHz. 'I'he wideband gain aiid transimpedance results here benchmark the highest bandwidths so f a r recorded for either HUT or U J T aimplifiers and suggests the capability of InAIAs/lnCaAs H.UTs for millimeter-wave and high data rate (40 G b p s ) IC applications. 0-7803-3504-XI96 $5.00 0 1996 IEEE GaAs IC Symposium -207

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Section: Introductioncontrasting

confidence: 56%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier

Kobayashi¹,

Cowles²,

Block³

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

Self Cite

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“…4). One of them acts as a feedback resistance (R F B ) and improves amplifier stability [8]. The stability behavior of the cascode stage is further enhanced by adding a small resistance (R D ) in series with the shorting capacitance (C HF ).…”

Section: Inp Dhbt Technologymentioning

confidence: 99%

InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth

Schneider

Driad

Makon

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-Parameters, is flat up to 80 GHz

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Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

Schneider

Driad

Makon

et al. 2005

IEEE Trans. Microwave Theory Techn.

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This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGaAs double heterojunction bipolar transistor technology featuring an f(ind t) and f(ind max) larger than 200 GHz. The amplifiers use five or eight gain cells with cascode configuration and emitter follower buffering. Although the technology is optimized for mixed-signal circuits for 80 Gbit/s and beyond, DA results could be achieved that demonstrate the suitability of this process for the realization of modulator drivers. The results are documented with scattering parameter, eye diagram, and power measurements. This includes amplifiers featuring a 3-dB bandwidth exceeding 80 GHz and a gain of over 10 dB. One of the amplifiers exhibits clear eyes at 80 Gbit/s with a gain of 14.5 dB and a voltage output swing of 2.4 V(ind pp) limited by the available digital input signal. This amplifier delivers an output power of 18 dBm (5.1 (V ind pp)) at 40 GHz and 1-dB compression. Two amplifiers offer a tunable gain peaking, which can be used to optimize circuit performance and to compensate losses in the circuit environment. The results show that, using our InP/InGaAs technology, an integration of high-speed mixed-signal circuits (e.g., multiplexers) and high-power modulator drivers on a single chip is feasible

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A 2-32 GHz coplanar waveguide InAlAs-InGaAs-InP HBT cascode distributed amplifier

Cited by 3 publications

References 11 publications

A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier

A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier

InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth

Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

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