A 1mm&lt;sup&gt;2&lt;/sup&gt; flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications

Hale, Cody; Baeten, Robert

doi:10.1109/rws.2010.5434209

2010 IEEE Radio and Wireless Symposium (RWS) 2010

DOI: 10.1109/rws.2010.5434209

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A 1mm<sup>2</sup> flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications

Cody Hale

Robert Baeten

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2022

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A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process. An asymmetrical SP3T switch architecture is incorporated to enable the receiver to operate in four modes. The exploration of impedance and voltage gain behavior of the proposed LNA help to establish the matching network and alleviate the trade-off between noise figure (NF) and gain performance. In LNA high gain mode, the implemented front-end receiver shows 1.7 dB of NF and 6dBm of input third-order intercept point (IIP3) with 20 dB of power gain drawing 11 mA of current from 5 V power supply at 2.4 GHz. All input and output return loss had exceeded 10 dB with fully on-chip impedance matching network. In bypass mode, the measured insertion loss of typically 7.5 dB is achieved.

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A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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A 1mm<sup>2</sup> flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications

Cited by 1 publication

References 3 publications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

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