A 180-mW Linear MZM Driver in CMOS for Single-Carrier 400-Gb/s Coherent Optical Transmitter

Nakano, Satoshi; Nagatani, Munehiko; Tanaka, Kenji; Ogiso, Yoshihiro; Ozaki, Josuke; Yamazaki, Hiroshi; Nosaka, Hideyuki

doi:10.1109/ecoc.2017.8346186

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…Although many types of research on the high‐bandwidth driver with low power consumption for optical transmitters have been conducted [2], they cannot meet this requirement. Thus, we have developed an ultra‐low power CMOS driver [3]. Moreover, it is also important to suppress the temperature dependence of the characteristics, especially the RF characteristics, in order to adapt to changes in operating temperature.…”

Section: Introductionmentioning

confidence: 99%

“…In this Letter, we report the most power efficient four‐channel linear driver IC integrated with a serial peripheral interface (SPI) for 64‐Gbaud coherent driver modulators, which is fabricated by 65‐nm CMOS technology. Compared to our previous report [3], we newly developed the four‐channel driver to support dual‐polarisation IQ modulations with a circuit to suppress the temperature dependence. Furthermore, an SPI has integrated the driver to improve a functionality.…”

Section: Introductionmentioning

confidence: 99%

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Low‐temperature‐dependence CMOS linear driver with serial peripheral interface for 64‐Gbaud ultra‐low power coherent optical transmitters

et al. 2018

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The authors used 65-nm CMOS technology to develop a linear four-channel driver IC with low temperature dependence and ultralow power dissipation for 64-Gbaud coherent optical transmitters. The driver showed more than a 48-GHz 3-dB electrical bandwidth and less than 1-W power consumption in four-channel operation. By employing a circuit that suppresses the temperature dependence, they achieved 3-dB electrical bandwidth variation of 3.0 GHz and the gain variation of 1.5 dB under the −5 to 75°C and ±5% supply voltage variation conditions. The CMOS driver has all the necessary functions for a high-bandwidth coherent driver modulator such as a gain control, peaking control, peak detection and temperature monitoring, all of which functions can be controlled by a serial peripheral interface. A fabricated sub-assembly consisting of the CMOS driver and an InP modulator showed a 48-GHz 3-dB electro-optic bandwidth.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low‐temperature‐dependence CMOS linear driver with serial peripheral interface for 64‐Gbaud ultra‐low power coherent optical transmitters

et al. 2018

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“…The device exhibits a 3-dB EO bandwidth of over 67 GHz and a V π of less than 1.5 V. We demonstrated 120-Gbaud QPSK modulation toward achieving ultrahigh-speed operation [11]. Furthermore, we developed the most power-efficient MZM driver using complementary metal-oxide semiconductor (CMOS) technology and demonstrated 64-Gbaud/16QAM operation with ultralow power dissipation by co-assembling the driver integrated circuit (IC) with our IQ modulator [12].…”

Section: Introductionmentioning

confidence: 99%

High-speed Modulator for Next-generation Large-capacity Coherent Optical Networks

Ozaki,

Ogiso,

Nakano

2018

NTT Technical Review

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Modulators with very high speeds are necessary to achieve the next-generation of 1-T/λ coherent optical networks. In this article, we describe our recently developed InP (indium phosphide)-based in-phase and quadrature (IQ) modulators with ultrahigh bandwidth and low half-wavelength voltage (V π ). We utilize a structure with extremely low electrical loss and obtain a 3-dB electro-optic bandwidth of over 67 GHz without degrading other characteristics such as driving voltage and optical loss. The IQ modulator performs IQ modulation at up to 120 Gbaud without optical and electrical pre-equalization. Furthermore, we developed an ultralow power modulator driver employing 65-nm CMOS (complementary metal-oxide semiconductor) technology and fabricated an IQ modulator co-assembled with this driver IC (integrated circuit), and successfully demonstrated 64-Gbaud/16QAM (quadrature amplitude modulation) operation.

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“…We developed a This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ linear modulator driver for an InP modulator in 65-nm CMOS [13]. With its stacked current mode architecture [14] and an open-drain structure, our CMOS driver achieves more than a 48-GHz 3-dB electrical bandwidth and consumes less than 1 W in four-channel operation [15].…”

mentioning

confidence: 99%

500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

Ozaki

Ogiso

Jyo

et al. 2020

J. Lightwave Technol.

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For 64-Gbaud operation and beyond, we developed a power efficient high-bandwidth coherent driver modulator composed of a linear four-channel ultra-low power CMOS driver IC and an InP-based dual-polarization IQ modulator. The CMOS driver was fabricated in 65-nm CMOS technology and showed power dissipation of <1 W owing to the use of an open-drain configuration and a stacked current-mode architecture. Moreover, by optimizing the temperature of the thermoelectric cooler that controls the modulator operating temperature, the coherent driver modulator achieved consumed power of <2.5 W at case temperatures of −5 to 75°C and <2.8 W under −5 to 85°C. As far as we know, this is the lowest power dissipation for a coherent driver modulator with an InP modulator chip. In addition, by employing a circuit that suppresses temperature dependence of RF characteristics in the CMOS driver, we achieved the 3-dB electro-optical bandwidth of >44 GHz and the variation of 2.0 GHz under the 25°to 85°C condition. Furthermore, we obtained good back-to-back bit-error-rate performance in up to dual polarization 80-Gbaud 16-QAM modulation.

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A 180-mW Linear MZM Driver in CMOS for Single-Carrier 400-Gb/s Coherent Optical Transmitter

Cited by 5 publications

References 7 publications

Low‐temperature‐dependence CMOS linear driver with serial peripheral interface for 64‐Gbaud ultra‐low power coherent optical transmitters

Low‐temperature‐dependence CMOS linear driver with serial peripheral interface for 64‐Gbaud ultra‐low power coherent optical transmitters

High-speed Modulator for Next-generation Large-capacity Coherent Optical Networks

500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

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