The evolution of integrated circuit has been characterized in the past three decades by an exponential growth, both in performances and in circuit complexity, and it is showing no sign of slowing down. Several families of technologies have contributed to this explosive development: bipolar, GaAs and MOS, but only the last one has emerged as suitable for VLSI. However, each of the three has found its special field of application and is bringing its contribute to the total growth of circuit integration. It is very likely that all three shall coexist also in the next future, and will benefit from a mutual exchange of basic techniques. CMOS however will remain the main technology for VLSI, due to low power dissipation, flexibility and relatively low complexity. The critical issues which could hinder the further development of CMOS technology in the submicron range are essentially related to reliability, due to the increase in electric field and power density. The proposed solutions will probably imply new standards in supply voltages and slow down the progress in device speed.