A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology

Design of Low Power 12.5Gb/s 10:1 Multiplexer

“…Several multiplexers have been reported in technologies such as SiGe, GaAs and InP at speeds of 10 Gb/s or higher [1]- [3]. However, these process are costly and difficult to integrate with other CMOS blocks in SerDes systems.…”

Generation of a 640 Gbit/s NRZ OTDM signal using a silicon microring resonator

“…Ultra-high-speed signals modulated in the non return-to-zero (NRZ) format would alleviate those issues, resulting in increased timing jitter tolerance in the demultiplexing process thanks to their flat top, as well as better resilience to dispersion and enhanced spectral efficiency [3]. However, the generation of high-speed NRZ signals is limited by the speed of electrical multiplexers (values as high as 165 Gbit/s have been reported [4]) and by the bandwidth of electro-optic modulators. Here, we propose instead to generate an ultra high speed NRZ signal using conventional OTDM techniques followed by all-optical modulation format conversion from RZ to NRZ, which can be performed in a silicon microring resonator (MRR), as recently demonstrated for moderate data rates in wavelength division multiplexing (WDM) applications [5].…”

Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

“…Mimicking Silicon, a roadmap toward higher performances, relying on scaling, has been proposed [1]. Various teams have reported on such advanced technologies [2][3] and on ICs using scaled InP HBTs for digital [4][5], analog [6][7][8][9] and data conversion [10][11] applications. Alcatel-Thales III-V Lab has been delivering for some times 40 Gbit/s mixed-signal ICs using its 1.5 µm technology [12].…”