Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

Godin, J.; Nodjiadjim, Virginie; Riet, M.; Berdaguer, P.; Drisse, O.; Derouin, E.; Konczykowska, A.; Moulu, J.; Dupuy, Jean-Yves; Jorge, F.; Gentner, J.L.; Scavennec, A.; Johansen, Tom K.; Krozer, Viktor

doi:10.1109/csics.2008.28

Cited by 64 publications

(26 citation statements)

References 16 publications

(17 reference statements)

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“…The device technology features a hexagonal emitter with a drawn width of 0.7 lm and targets high-swing mixed-signal ICs for operation speed at 100 Gbit/s and above [11]. Multifinger devices with breakdown voltage of BV ceo >4.75 V are available for power applications.…”

Section: Inp Dhbt Technologymentioning

confidence: 99%

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

Johansen¹,

Yan²,

Dupuy³

et al. 2013

Micro & Optical Tech Letters

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This letter describes the use of a power-optimized cascode configuration for obtaining maximum output power at millimeter-wave (mm-wave) frequencies for a two-way combined power amplifier (PA). The PA has been fabricated in a high-speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 lm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power-added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode configuration at mm-wave frequencies are confirmed by both simulations and experimental results.

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Section: Inp Dhbt Technologymentioning

confidence: 99%

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

Johansen¹,

Yan²,

Dupuy³

et al. 2013

Micro & Optical Tech Letters

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“…1 and the layer structure is listed in Table I is 300/400 GHz. Compared with early reported 0.5 µm InP DHBT [13,14,15,16], this process have some high frequency performance improvement. The process provides three wiring metal layers and compact interconnect vias between them.…”

Section: Processmentioning

confidence: 99%

140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

Zhang

et al. 2017

IEICE Electron. Express

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This paper presents a high gain, medium power amplifier for D band application based on 0.5 µm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75 GHz and at 140 GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140 GHz with DC power consumption 250 mW.

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“…Fig. 2 Microphotograph of driver IC InP DHBT technology: The IC was fabricated in the InP DHBT technology available in III-V Lab [5]. This process was performed on epilayers grown by GSMBE on 3-inch wafers with a carbon-doped base.…”

mentioning

confidence: 99%

42 GBd 3-bit power-DAC for optical communications with advanced modulation formats in InP DHBT

et al. 2011

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A 3-bit power-DAC was designed and fabricated in 0.7 mm InP doubleheterojunction bipolar transistor (DHBT) technology. An 8-level differential output signal with 3.6 V pp amplitude was measured at symbol rates in the range of 40 GBd. The circuit combines DAC and driver functions allowing to directly drive a modulator without need for a linear amplifier. This compact IC solution is suitable for transmitters with advanced modulation formats like 64-QAM operating at high symbol rate.Introduction: High capacity optical transmission systems with optimised spectral efficiency are presently being intensively investigated [1]. Modulation formats offering spectral efficiency superior to on/off keying and in particular multilevel coded transmission such as M-ary quadrature amplitude modulation (M-QAM) and operating at high symbol-rate are of particular interest.Different solutions are presently investigated to realise QAM transmitters. The optical multimodulator transmitters combine binary signals in the optical domain. An alternative option is to apply multilevel electrical signals to the much simpler I/Q modulator.The most popular architecture for generation of a multilevel electrical signal is composed of a high-speed electrical digital-to-analogue converter (DAC) followed by a broadband linear amplifier. DACs with important numbers of bits are used which is leading to complex architecture and high power consumption.A 6-bit DAC fabricated in SiGe HBT [2] presents 1.6 V differential amplitude and operates up to 32 GBd. A 6-bit DAC realised in InP HBT technology with very low power consumption is reported in [3]. However, the electrical signal for 28 GBd 16-QAM transmission obtained with this DAC has a differential amplitude limited to 300 mV. A multiformat transmitter for 64-QAM operating at 28 GBd based on the DAC reported in [2] has been presented in [4]. In all the above cited transmitters, the DAC output signal needs to be amplified to correctly drive the modulator. For high frequency operation, amplifiers with sufficient linearity and dynamic are an important design challenge. Additionally, in such system architecture, the intermediate level distortions and noise are amplified and impair transmission quality.In this Letter, we propose an architecture based on a power-DAC concept in which two operations, (i) combination of three input data streams to create multilevel signals and (ii) amplification, necessary for a modulator driver, are realised simultaneously with all circuit elements operating in digital instead of a mixed digital-analogue way. A 3-bit power-DAC has been realised, but this concept can be applied to an arbitrary number of bits.

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Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

Cited by 64 publications

References 16 publications

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

42 GBd 3-bit power-DAC for optical communications with advanced modulation formats in InP DHBT

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