2014 IEEE Asian Solid-State Circuits Conference (A-Sscc) 2014
DOI: 10.1109/asscc.2014.7008876
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A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel

Abstract: A 16.8Gbps/channel single ended transceiver for SiP based DRAM interface on silicon carrier channel is presented. A transmitter, receiver, and channel are all included in a single package. On the transmitter, 1 tap FFEs are used in 4:1 MUX and in output driver. On the receiver, source follower based CTLEs and self Vref generator are used for obtaining effective single ended signaling on Si-carrier channel. A BER that is less than 1e-12 is achieved in 65nm CMOS. The power efficiency of the transceiver is 5.9pJ/… Show more

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