A 140-GHz quad-receivers IC and sub-assembly for compact passive imaging sensors

Kosugi, Toshihiko; Sugiyama, Hiroki; Matsuzaki, Hiroyuki; Murata, Koichi; Nakamura, Mitsunori; Satoh, Hiroshi; Throngnumchai, Kraisorn

doi:10.1109/mwsym.2012.6259665

Cited by 3 publications

(1 citation statement)

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“…The sensitivity (or thermal resolution) of such systems is largely influenced by the receiver (LNA) NF, gain and bandwidth and a low-loss Dicke switch network can be used for calibration purposes and compensate for gain variations [10]- [14]. A SiGe LNA and a Dicke switch network with 3 dB/12 dB of losses/isolation at 130 GHz were reported in (Shumakher et al 2013).…”

Section: Introductionmentioning

confidence: 99%

30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology

Reyaz

Samuelsson²,

Gustafsson

et al. 2015

Advances in Microelectronic Engineering

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This work presents a novel monolithic integration of a 30 GHz RF-MEMS Dicke switch network and a wideband LNA realised in a 0.25 μm SiGe BiCMOS process. The wideband LNA design has a measured gain of 10-19.9 dB at 2-33 GHz given a DC power consumption (PDC) of 35 mW and a measured noise figure of 5.4-6.3 dB at 14-26.5 GHz when PDC=7.5 mW (the LNA gain is then 10-14.2 dB at 4-26 GHz). The Dicke switch has 3 dB and 22 dB of losses and isolation at 25 GHz. The MEMS switched LNA gain was found to be 10-17 dB lower than anticipated due to some unintentionally missing metal via contacts between the Dicke switch and LNA ground planes. Despite this fact, the MEMS LNA resulted in a measured isolation of 9.0-13.5 dB at 24-31 GHz when the Dicke switch was switched ON and OFF which validates the switching function of the SiGe RF-MEMS wideband LNA design. Such reconfigurable low-power MEMS switched RFICs could be used in highly adaptive broadband receiver front-ends for wireless communication, sensor networks and imaging systems, for example.

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Section: Introductionmentioning

confidence: 99%