The platform will undergo maintenance on Sep 14 at about 7:45 AM EST and will be unavailable for approximately 2 hours.
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
DOI: 10.1109/iedm.2000.904383
|View full text |Cite
|
Sign up to set email alerts
|

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
44
0

Publication Types

Select...
4
3
2

Relationship

0
9

Authors

Journals

citations
Cited by 106 publications
(45 citation statements)
references
References 0 publications
1
44
0
Order By: Relevance
“…This is achieved by using low devices in the critical sparse-tree and high devices on the noncritical sum-generator paths. The 10 differential in leakage currents between high and low devices [4] results in an overall 56% reduction in leakage energy consumption without impacting performance ( Table I). Note that highallocation was performed on an initial all-low-design without transistor resizing.…”
Section: A Dualdesignmentioning
confidence: 99%
See 1 more Smart Citation
“…This is achieved by using low devices in the critical sparse-tree and high devices on the noncritical sum-generator paths. The 10 differential in leakage currents between high and low devices [4] results in an overall 56% reduction in leakage energy consumption without impacting performance ( Table I). Note that highallocation was performed on an initial all-low-design without transistor resizing.…”
Section: A Dualdesignmentioning
confidence: 99%
“…Thus, the output of the compressor array is a pair of 32-bit numbers that represent the carry-save format of the effective address. This phase of address computation includes the latch data-to-delay, shifter delay, 3 : 2 compressor delay and setup time at the adder core inputs and takes 98 ps in a 1.2-V 130-nm technology [4]. During this phase, the adder core will be in the precharge state.…”
Section: Agu Architecturementioning
confidence: 99%
“…other known techniques to reduce leakage during standby mode but in this paper we focus on runtime leakage reduction which is a more difficult and pressing problem. Currently dual-V th is the only practical approach to achieving substantial runtime leakage reduction [9].…”
Section: Overview Of Encodingmentioning
confidence: 99%
“…All simulations are performed at a temperature of 100C. A typical global metal layer for a 0.13µm technology node [9] is used for routing the bus, with a minimum pitch of 1.2µm (Fig. 9).…”
Section: Energy/current-delay Comparisonsmentioning
confidence: 99%