A 130.7mm&lt;sup&gt;2&lt;/sup&gt; 2-layer 32Gb ReRAM memory device in 24nm technology

Liu, Tz-yi; Yan, Tian Hong; Scheuerlein, R.E.; Chen, Yingchang; Lee, J. K.; Balakrishnan, Ganesh; Yee, G.; Zhang, H.; Yap, A.; Ouyang, Jingwen; Sasaki, Tadahiro; Addepalli, S.; Al-Shamma, Ali; Chen, Chin‐Yu; Gupta, Mayank; Hilton, Greg; Joshi, Sachin; Kathuria, A.; Lai, Vincent; Masiwal, D.; Matsumoto, Masahide; Nigam, Anurag; Pai, Anil; Pakhale, J.; Siau, Chang Hua; Wu, Xiaoxia; Yin, Ranyu; Peng, Liping; Kang, Jang Yong; Huynh, Sharon; Wang, Huijuan; Nagel, N.; Tanaka, Y.; Higashitani, M.; Minvielle, Tim; Gorla, C.; Tsukamoto, Takayuki; Yamaguchi, Tomohiro; Okajima, M.; Okamura, Takayuki; Takase, S.; Hara, T.; Inoue, Hiromu; Fasoli, L.; Mofidi, M.; Shrivastava, R.; Quader, K.

doi:10.1109/isscc.2013.6487703

Cited by 51 publications

(13 citation statements)

References 2 publications

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“…In late 2013, the first commercial MO-BF ReRAM product was announced, which will be a TaO x -based device integrated into an eight-bit microcontroller [7]. In early 2013, a bi-layer 32 Gb prototype chip was announced, which is nearing the capacity of modern NAND flash [9]. Device structure and material details were not given in this report.…”

Section: Metal Oxide: Bipolar Filamentarymentioning

confidence: 99%

Emerging Memory Devices: Assessment and Benchmarking

Marinella

Zhirnov

2014

Emerging Nanoelectronic Devices

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Section: Metal Oxide: Bipolar Filamentarymentioning

confidence: 99%

Emerging Memory Devices: Assessment and Benchmarking

Marinella

Zhirnov

2014

Emerging Nanoelectronic Devices

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“…In 2012, Hynix demonstrated a TiO x /Ta 2 O 5 ReRAM based test chip which used the bilayer oxide to achieve nonlinearity [32]. In 2013, Sandisk/Toshiba reported a prototype 32 Gb ReRAM macro [33], although device details were not given.…”

Section: B Metal Oxide: Bipolar -Filamentarymentioning

confidence: 99%

Emerging resistive switching memory technologies: Overview and current status

Marinella

2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility. Furthermore, the analog aspects of memristors have opened the door for many novel applications such as analog math accelerators and neuromorphic computers. This paper provides an overview of resistive memory technologies and their current status, with a focus on redox RAM (ReRAM).

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“…[9] SanDisk and Toshiba have demonstrated the 32 GB RRAM chip in 24 nm technology. [10] For practical nonvolatile memory applications, RS devices should be developed in the crossbar array configuration to achieve the highest possible area efficiency and data storage density. However, the sneak current problem is a major concern in crossbar array configurations, owing to the parallel geometry of the memory architecture.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Dongale

Kamble

Kang

et al. 2021

Physica Rapid Research Ltrs

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The recent progress of selector and self-rectifying devices for resistive randomaccess memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

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A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology

Cited by 51 publications

References 2 publications

Emerging Memory Devices: Assessment and Benchmarking

Emerging Memory Devices: Assessment and Benchmarking

Emerging resistive switching memory technologies: Overview and current status

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

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