A 120 watt GaN power amplifier MMIC utilizing harmonic tuning circuits for S-band applications

Alexander, Andrew; Leckey, J.G.

doi:10.1109/mwsym.2015.7167045

Cited by 13 publications

(4 citation statements)

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“…4. The highest output power levels include 135 W with 47% PAE at 3.1 GHz [40], 40 W with 45% PAE at 5.4 GHz [41], 60 W with 40% PAE at 5.5 GHz [43], 74 W with 40% PAE at 10 GHz [44], 10 W with 45% PAE at 18 GHz [46], and 40 W with 32% PAE at 27 GHz [50].…”

Section: B Reactive Matching Pasmentioning

confidence: 99%

“…Several fully integrated GaN PAs using the reactive matching are presented in the literature [40], [41], [42], [43], [44], [47], [65], [69], [70] and developed as commercial products [30], [31]. A performance summary of fully integrated GaN PAs operating in RF bands is presented in Table 2.…”

Section: B Reactive Matching Pasmentioning

confidence: 99%

“…Finally, in the circuit level, major developments can be classified to low-loss power combining techniques, harmonic termination networks, integration of bandpass filter (BPF) into the PA circuit, linearization techniques for AM-AM and AM-PM distortions, and broadband uniform and nonuniform distributed PAs. The overall result of these progresses is the development of fully integrated GaN RF PAs with multi-hundred-watt output power, e.g., products by Qorvo [30] and Wolfspeed [31], highly scaled GaN processes, e.g., 40-nm GaN-on-SiC double-heterostructure field-effect transistor (DHFET) [67], [68], 40-nm and 70-nm GaN-on-SiC HEMTs [20], [89], and high-power mm-wave GaN PAs providing 34.8 dBm (3 W) at 84 GHz [83], 37.8 dBm (6 W) at 95 GHz [65], 26 dBm at 120 GHz [70], 15.8 dBm at 180 GHz [70], and 18.5 dBm at 205 GHz [71].…”

Section: Introductionmentioning

confidence: 99%

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GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Nikandish

2023

IEEE J. Microw.

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GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power densities, has created a paradigm shift in the established and emerging high-power applications. In this article, we present a review on the developments and prospects of GaN integrated circuit power amplifiers (PAs). The progress of GaN transistors including improvements in their important features, i.e., supply voltage, substrate material, transistor scaling approach, and device modeling are elaborated and the current state-of-the-art processes with 20-nm gate length, 450 GHz cut-off frequency, and over 600 V supply voltage are discussed. We also investigate developments in the GaN integrated circuit PA architectures and their implementation challenges including the reactive matching PAs capable of delivering over 100 W output power and operating up to 200 GHz, PA linearity, back-off efficiency enhancement, reconfigurable PAs, and distributed PA architectures. Finally, we discuss the prospects of GaN technology and possible future improvements, in transistor and circuit levels, which can advance performance and functionality of GaN integrated circuits.INDEX TERMS Distributed amplifier, Doherty power amplifier, Gallium Nitride (GaN), high-electron mobility transistor (HEMT), integrated circuit, mm-Wave, monolithic microwave integrated circuit (MMIC), MTT 70th Anniversary Special Issue, power amplifier (PA).This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.REZA NIKANDISH (Senior Member, IEEE) received the Ph.D. degree in electrical engineering

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Section: B Reactive Matching Pasmentioning

confidence: 99%

Section: B Reactive Matching Pasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Nikandish

2023

IEEE J. Microw.

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“…Compared with class E and class F related highefficiency topology, harmonic tuned approach is relatively simple [4][5][6], as it is easier to control the second harmonic than the higher harmonics in microwave band, especially for high-power MMIC occupied with small area. Recently, harmonic tuned approach has proved to be a good candidate for GaN HPA MMIC in S-band [7]. However, there are few reports for harmonic tuned GaN HPA MMIC in C-band yet [6].…”

mentioning

confidence: 99%

C‐band 60 W GaN power amplifier MMIC designed with harmonic tuned approach

Sun

et al. 2016

Electron. lett.

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A C-band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5-6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm).

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