A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Saito, Wataru; Nitta, T.; Kakiuchi, Y.; Saito, Yasunobu; Tsuda, Koji; Omura, Ichiro; Yamaguchi, Masakazu

doi:10.1109/led.2007.910796

Cited by 125 publications

(53 citation statements)

References 11 publications

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“…Efficient boost converters in the voltage range of 175-350 V (efficiency of 97.8% and output power of 300 W) and at 940 V (efficiency of 94.2% and output power of 122 W) are reported for 1 MHz switching frequency. [67][68][69] Boost converters Comparison between GaN FET-based and Si MOSFETbased 48/12 V unregulated isolated bus converters at 1.2 MHz, show that power loss in GaN FET device was 25% less than the Si MOSFET device. 66 This demonstrates the capability of GaN for high efficiency application in boost converter.…”

Section: The Iii-nitrides For High Power Electronics and Rf Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For High Power Electronics and Rf Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Such non-localized trapping effects should have a strong adverse effect on the performance. In fact, Saito et al 21,22 have pointed out that the operation voltages of these devices are always much lower than the breakdown voltages owing to the increased conduction loss caused by current collapse. To address this issue, they suppressed the high electric field at the gate edge using optimized field plate (FP) structures, 21,22 implying that the non-localized trapping effects were not specifically considered.…”

Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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“…GaN has been a promising material for high-electron-mobility transistors (HEMT) designed for power converters due to its wide bandgap, high critical field, and high two-dimensional electron gas (2DEG) mobility. [1][2][3] However, one of the main performance-limiting factors has been the high gate and off-state drain leakage currents in the transistor that are introduced by SiN x passivation. 4 While microwave HEMT applications have traded off the increased leakage cost of SiN x passivation for its well-known benefit of reduced current collapse effects, [5][6][7] power switching applications have stricter requirements in order to achieve competitive efficiency and reliability.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers

Tadjer

Anderson

Hobart

et al. 2010

Journal of Elec Materi

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A comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiN x is presented. Performing ex situ SiN x passivation increased the reverse gate leakage and off-state channel leakage by about three orders of magnitude. The in situ SiN x layer was characterized using transmission electron microscopy (TEM) and capacitance-voltage (CV) measurements. Photoluminescence (PL) spectra indicated a reduction of nonradiative recombination centers in in situ SiN xpassivated samples, indicating improved crystal quality. CV measurements indicated a reduction of surface state density as well, and thus better overall passivation using in situ SiN x . Electroluminescence (EL) images of the channel regions in AlGaN/GaN HEMT devices operating in forward blocking mode with up to 400 V drain bias demonstrated reduced channel emission profiles of in situ-passivated devices. Compared with a nonpassivated reference sample, the reduced EL emission profiles correlated with a reduced channel temperature on ex situ SiN x -passivated devices.

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A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Cited by 125 publications

References 11 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers

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