A 12 GHz-band super low-noise amplifier using a self-aligned gate MESFET

Abstract

A 12GHz-band 4-stage monolithic super lownoise amplifier has been designed and fabricated using self-aligned multi-layer gate FETs. A 0.3pm-gate F E T used in the amplifier has achieved a typical noise figure of 1.07dB with an associated gain of 9.0dB at 12GHz. The amplifier gives a minimum noise figure of 1.58dB with a gain of 29dB at 12GHz and the noise figure is less than 1.76dB with an associated gain as high as 28.0dB in the frequency range from 11.7 to 12.7GHz. It is the lowest noise figure ever reported for MESFET monolithic amplifiers in the 12GHz-band.

A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

“…When the amplifier is operated at high frequency around 12 GHz the performance variation due to process tolerance has to be considered during design stage. The previous amplifiers designed at 12 GHz frequency band were implemented using different process technologies like GaN [1], CMOS SOI/SOS [2], Silicon RF MESFET [3], HEMT [4], GaAs [5] and InAlAs/InGaAs mHEMT [6]. All these process technologies are expensive and are not cost effective as compared to the proposed amplifier's technology.…”