A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

Effects of grain boundary structure and shape of the solid–liquid interface on the growth direction of the grain boundaries in multicrystalline silicon

“…In this case, the GB is considered to grow along the z -direction controlled by the minimization of E ( θ ). This is supported by the experimental observation reported by Chuang et al 29 As illustrated by these examples, our theory could explain various experimental observations of the growth direction of GBs.…”

“…28 Chuang et al observed that when Σ 9 GB decomposes to form {112} Σ 3 GBs, faceted grooves are formed at the junction of the solid–liquid interface and the {112} Σ 3 GBs, and if the growth rates of the adjacent surfaces of the grooves are the same, the GBs grow linearly along the {112} plane. 29 Kutsukake et al found that the GB structure slightly deviated from (310) Σ 5 GB changes during growth to compensate for the deviation. 30 As mentioned above, an understanding of GBs, in general, is essential for making polycrystalline materials more functional by appropriately utilizing GBs (GB engineering).…”