A -102 dB PSRR 1.2V Bandgap Voltage Reference for use in a Standalone MPPT Boost Converter for Solar Submodules

Hanhart, Michael; Grobe, Jan; Zoche, Jonas; Wunderlich, Ralf; Heinen, Stefan

doi:10.1109/icecs202256217.2022.9971084

Cited by 4 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because the accuracy of the reference voltage source and the reference current source will greatly affect the precision of the LDO, and LDO is a low-power consumption module, the reference source circuit needs to have high precision and extremely low power use [2]. The project LDO needs a reference voltage supply is 2 V, the general band-gap reference (BGR) circuit is the bipolar-junction-transistor (BJT) structure, and the typical [3]. In order to reach a non-1.2 V output, generally, it will use the current model, with the resistance transformation pressure to be achieved, or with the operation amplifier (OPA) to the purpose, which will make the power expenditure greater and increase the area occupied by the reference source [4][5].…”

Section: Introductionmentioning

confidence: 99%

A MOSFET subdivision, MOSFET-only subthreshold voltage and current reference for LDO applications

Yu,

Duan,

Zhou

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

This paper proposes a MOSFET-only voltage and current reference circuit, which can simultaneously provide a 2 V reference voltage and 300 nA reference current. This design is mainly used in a low-power Low-Dropout Regulator (LDO) project, after simulation verification, which works well in LDO applications. The circuit is performed by SMIC.18 CMOS technology and simulation with the Cadence platform, with different threshold voltage MOSFET circuit design. The whole circuit works in the subthreshold area, and the overall circuit consists of the start-up circuit, the current reference circuit, the voltage reference circuit, the MOSFET subdivision circuit, and the current mirror output circuit. The circuit has the characteristics of high precision and low power consumption, with a layout size of only 0.015 mm2. Under a temperature range of -30 to 70 °C and a power voltage of 3.3 V, the simulation and post-simulation temperature coefficients (TC) of the circuit are 5.4 ppm/°C and 19.4 ppm/°C, respectively. The post-simulation output reference voltage at room temperature is 2.0008 V, and the working power voltage within the circuit error range is 3.2 V to 3.4 V. Excluding the current mirror output circuit part of the Current-Quiescent (IQ) being 530 nA, the power consumption is 1.75 μW when the supply voltage is 3.3 V, and the design goal is reached.

show abstract

Section: Introductionmentioning

confidence: 99%

A MOSFET subdivision, MOSFET-only subthreshold voltage and current reference for LDO applications

Yu,

Duan,

Zhou

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range

Xue

Zhang

Fang

et al. 2023

Electronics Letters

View full text Add to dashboard Cite

A low-power negative-positive-negative (NPN)-based bandgap voltage reference (BGR) over an ultra-wide temperature range is presented. The conventional NPN-based BGRs cannot maintain a low-temperature coefficient (TC) with low power consumption in an ultra-wide temperature range due to its inherent reverse junction saturation current of NPN bipolar junction transistors (BJT) in the high-temperature range. This work introduces a new NPN-based BGR unaffected by such saturation current. Based on Vanguard International Semiconductor Corporation (VIS) 0.18 μm/0.15 μm complementary metal oxide semiconductor (CMOS) Bipolar-CMOS-DMOS (BCD) process, the BGR receives the best 1.25-mV deviation over the temperature range of −40°C to 150°C, much less than 38.5 mV from Brokaw-type BGR. Meanwhile, the proposed BGR with the stacked NPNs for higher output voltage was fabricated. It consumes about 2 uA from a 5-V power supply, and its average temperature coefficient is 14.89 ppm/°C. Also, the average line sensitivity is 0.039%/V.

show abstract

Design of High PSRR Bandgap Reference Using Impedance-Splitting Negative-R-Assisted Technique

Kim,

Roh

2023

2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

View full text Add to dashboard Cite

A -102 dB PSRR 1.2V Bandgap Voltage Reference for use in a Standalone MPPT Boost Converter for Solar Submodules

Cited by 4 publications

References 12 publications

A MOSFET subdivision, MOSFET-only subthreshold voltage and current reference for LDO applications

A MOSFET subdivision, MOSFET-only subthreshold voltage and current reference for LDO applications

A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range

Design of High PSRR Bandgap Reference Using Impedance-Splitting Negative-R-Assisted Technique

Contact Info

Product

Resources

About