A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR

Abstract

Abstract-In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor Sparameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60• C to 140• C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

“…Therefore, the definition of admittance condition in the plane of C and R elements seems natural. This approach is described in detail in [ 38 , 39 ]. In the assembly of the amplifier circuit, we use AlGaN/GaN HEMT on semi-insulating Ammono-GaN substrate with subcontact n -In Ga N:Si regrown epilayer and Ti/Al/Mo/Au ohmic contact annealed at 850 °C (representative characteristics of one of the devices from the same wafer are presented in Figure 6 and Figure 7 ).…”

Impact evaluation of DC operating condition on DPD linearizability and power efficiency in GaN-based power amplifiers

“…For that purpose, a methodology of the extraction of elements of the equivalent circuit was developed based on the measurement of S -matrix only for three operating points, i.e. for the states: turned off ( U GS ≤ U Thershold , U DS = 0 V or U GS ≤ U Thershold , U DS = U DSQ ), turned on ( U GS = 0 V, U DS = 0 V), and in the planned work conditions ( U DS , I D = I DPM ) [12,13]. The drain current I DPM corresponds to the peak or at least average output power and results from the performances of transistor and signal standard (PAPR).…”

Parametry tranzystorów GaN HEMT - wyniki I etapu projektu PolHEMT

“…Do obliczeń przyjęto schemat zastępczy tranzystora, który pokazano na rysunku 7. Wartości parametrów modelu wyznacza się w procesie dopasowania zmierzonych i symulowanych przebiegów wyrazów macierzy [s] jednocześnie dla trzech stanów pracy tranzystora [4]. Podejście takie, przy założeniu, że pasożytnicze elementy takie jak indukcyjności i rezystancje szeregowe są niezależne od punktu pracy, prowadzi do uzyskania dużej dokładności obliczonych parametrów.…”