A 1 GHz CMOS transimpedance amplifier for chip-to-chip optical interconnects

Haralabidis, N.; Katsafouros, S.; Halkias, G.

doi:10.1109/iscas.2000.857461

Cited by 13 publications

(5 citation statements)

References 6 publications

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“…It is clear that the results obtained with the new CB designs are superior to those reported in (Toumazou and Park, 1996) and in (Park and Yoo, 2003). Also, these results are better than those reported in (Haralabidis et al, 2000) and fairly approach those obtained with GaAs MESFET and InP-HBT (Huber et al 2000;Yoneyama et al 2000;Minasian, 1987). Figure 7 shows the transient response of the previous CB TIA designs when driven by a 2.5 Gbps input current pulse train.…”

Section: Noise Analysissupporting

confidence: 59%

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

Touati

Loulou²

2007

Jou. Eng. Res.

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High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more- FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 μm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology fT of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

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Section: Noise Analysissupporting

confidence: 59%

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

Touati

Loulou²

2007

Jou. Eng. Res.

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“…It is clear that the results obtained with the new CB designs are superior to those reported in [3] and [8]. Also, these results are better than those reported in [9] and fairly approach those obtained with GaAs MESFET and InP-HBT [6], [10], and [11]. Figure 7 shows the transient response of the previous CB TIA designs when driven by a 2.5 Gbps input current pulse train.…”

Section: Figure 6 Total Mean Input-referred Noise Current Versus Frementioning

confidence: 56%

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

Touati

2007

2007 ICTON Mediterranean Winter Conference

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High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common-base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more-FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8µm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology f T of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

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“…Several circuit techniques have been proposed to relax the effect of the large input parasitic capacitance by using different input configuration, such as common gate/base (CG/CB) [2], regulated cascade (RGC) [1], common drain/collector (CD/CC) [3], and common source/ emitter (CS/CE) [4]. Although CG/CB and RGC input configurations, due to their low input impedances, are more efficient than CS/CE and CD/CC in relaxing the effect of parasitic input capacitance; while they suffer from high noise contribution of the load and input transistors [2].…”

Section: Tia Topologymentioning

confidence: 99%

A 70 dBohm 2.3 GHz low noise transimpedance amplifier

Yang

Liu

Zhang

et al. 2013

2013 IEEE Third International Conference on Consumer Electronics ¿ Berlin (ICCE-Berlin)

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A low-noise transimpedance amplifier (TIA) for 2.5 Gb/s family is presented using 0.35 μm BiCMOS technology. It would be used in radiation detectors to transform the current pulse produced by a photo-sensitive device into an output voltage pulse with a specified amplitude and shape. In this paper the mathematical analysis of the proposed TIA is presented together with a detailed analytical noise optimization. For the gain boosting, Cherry-Hooper amplifier is introduced for the second stage amplification. Also a method for eliminating the DC current of the input photodiodes (PD) is proposed. The chip measured results show the TIA achieves a constant gain of 70 dBΩ from 125 kHz to 2.3 GHz when connected to a 0.85 pF load, average input referred noise of 2.13 pA/ √ Hz up to 0.8 GHz, 18 mA supply current at +3.3 V including the output buffer. The die size is 30mil×50mil.

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A 1 GHz CMOS transimpedance amplifier for chip-to-chip optical interconnects

Cited by 13 publications

References 6 publications

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

A 70 dBohm 2.3 GHz low noise transimpedance amplifier

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