A 1.9-GHz CMOS VCO with micromachined electromechanically tunable capacitors

Dec, A.; Suyama, K.

doi:10.1109/4.859516

Cited by 67 publications

(29 citation statements)

References 25 publications

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“…3 shows an isometric view of the deflected movable plate that has four springs via nodal solution. The four springs are common in the design of variable capacitors [14][15][16][17][18][19][20] and are referred to as T-shape suspensions. From Fig.…”

Section: Introductionmentioning

confidence: 99%

Modeling and modification of the parallel plate variable MEMS capacitors considering deformation issue

Zhang

Fang

2009

Mechanism and Machine Theory

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Section: Introductionmentioning

confidence: 99%

Modeling and modification of the parallel plate variable MEMS capacitors considering deformation issue

Zhang

Fang

2009

Mechanism and Machine Theory

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“…Similar results were observed in the works presented by Suyama (1997, 2000b). Such discrepancy between the estimated and measured capacitances has been attributed to residual stress and the resulting non-flat initial shape of the suspended plate by Dec and Suyama (2000b). Dec and Suyama (1997) also performed open pad testing to estimate the parasitic contributions from the substrate and the pad; but no analytical validation was presented there.…”

Section: Introductionmentioning

confidence: 97%

A top-down design methodology of MEMS varactor for RF applications based on a substrate-induced capacitive model

2011

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Due to their excellent quality factor in microwave frequency range, microelectromechanical (MEMS) varactors are an attractive choice for wireless communication engineers for building high performance telecommunication circuits. Significant progress in the technology of MEMS varactor has been reported over the past few years; however a comprehensive design methodology for the varactors based on some performance specifications is not reported. Also, it has been found that for the varactors fabricated with multi user processes (MUMPs), the measured capacitance deviates widely from the predicted value. In this work, it has been shown that a substrateinduced capacitance can change the expected capacitance of the varactor widely and can justify the deviation of the measured values to a good degree of accuracy. Here, a quantitative account of this difference has been presented. The capacitance profile of the varactor fabricated in PolyMUMPs process has been measured and the results show good agreement with the design values; thus indicating a clear influence of substrate induced capacitance on the varactor. Finally, a systematic design methodology of the varactor for a voltage controlled oscillator (VCO) application has been given.

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“…Hence off-chip discrete inductors and bond-wire inductors (Dec and Suyama 2000;Svelto and Castello 2002) have been used in the RF applications to provide high quality factor so as to improve the overall RF system performances. But off-chip inductors usually occupy large areas of the RF systems, and bond-wire inductors have a limitation in process repeatability.…”

Section: Introductionmentioning

confidence: 99%

Chip-level integration of RF MEMS on-chip inductors using UV-LIGA technique

et al. 2008

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This paper presents a chip-level integration of radio-frequency (RF) microelectromechanical systems (MEMS) air-suspended circular spiral on-chip inductors onto MOSIS RF circuit chips of LNA and VCO using a multi-layer UV-LIGA technique including SU-8 UV lithography and copper electroplating. A high frequency simulation package, HFSS, was used to determine the layout of MEMS on-chip inductors with inductance values close to the target inductance values required for the RF circuit chips within the range of 10%. All MEMS on-chip inductors were successfully fabricated using a contrast enhancement method for 50 lm air suspension without any physical deformations. High frequency measurement and modeling of the integrated inductors revealed relatively high quality factors over 10 and self-resonant frequencies more than 15 GHz for a 1.44 nH source inductor and a 3.14 nH drain inductor on low resistivity silicon substrates (0.014 X cm). The post-IC integration of RF MEMS onchip inductors onto RF circuit chips at a chip scale using a multi-layer UV-LIGA technique along with high frequency measurement and modeling demonstrated in this work will open up new avenues with the wider integration feasibility of MEMS on-chip inductors in RF applications for costeffective prototype applications in small laboratories and businesses.

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A 1.9-GHz CMOS VCO with micromachined electromechanically tunable capacitors

Cited by 67 publications

References 25 publications

Modeling and modification of the parallel plate variable MEMS capacitors considering deformation issue

Modeling and modification of the parallel plate variable MEMS capacitors considering deformation issue

A top-down design methodology of MEMS varactor for RF applications based on a substrate-induced capacitive model

Chip-level integration of RF MEMS on-chip inductors using UV-LIGA technique

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