A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s Programming Speed

Abstract

A 1.8V 4Mb floating-gate Flash test chip utilizing Back Bias assisted Band-to-Band tunneling induced Hot Electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double Source Line Architecture (DSLA) and Selective Verifying Method (SVM), applied to NOR arrayed B4-Flash enables to achieve 100MB/s programming speed. The MLC capability of B4-Flash memory is also shown by realizing three levels of programmed Vth distribution with 0.8V width.