A 1–40-GHz LNA MMIC Using Multiple Bandwidth Extension Techniques

Hu, Jianquan; Ma, Kaixue

doi:10.1109/lmwc.2019.2908883

Cited by 26 publications

(13 citation statements)

References 10 publications

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“…Frequency response of the active inductor load [121] F I G U R E 2 4 Schematic of the proposed inductorless differential low noise amplifier [121] carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to 'the noise/ distortion cancelation topologies' [164, 167, 173, 181, 189, 192, 194, 195, 201, 212, 216, 218, 220, 226, 227, 232, 233, 235, 236, 247, 254, 257-259, 266, 267, 270, 275-277, 282, 283, 287, 290, 291, 295, 298, 302, 305-307, 309, 312, 314, 317, 322, 326-328, 335, 338, 349-351, 355, 357], 'the g m -boosting topology' [164, 167, 168, 172, 176, 181, 184, 192, 194, 195, 206, 208, 209, 212, 213, 225, 227, 228, 232, 233, 236, 250, 252, 256, 266, 267, 273-277, 282, 285-287, 290, 291, 298, 302, 305-307, 309, 314, 317, 321, 326, 327, 338, 346, 349], 'the inductive peaking topology' [165,167,173,185,207,260,262,288,290,309,311,349,353], 'the current-reused technique' [174,185,188,206,225,228,274,276,285,290,298,306,315,337,338,346,349,355] and 'the AI technique' [164,179,22...…”

Section: In the 2010smentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: In the 2010smentioning

confidence: 99%

“…Other available HEMT works had higher P dc (9.8 to 900 mW) which had higher NF and lower A V such as [174, 187, 191, 222, 241, 255, 284, 294, 299–301, 313, 329, 342–344, 353].…”

Section: Uwb Lnamentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…Shunt feedback method was used to improve wide operating point as well as form using noise reduction methods. Jianquan Hu et al [40] Dalia Elsheakh et al [41] have introduced Differential Noise Canceling method in UWB LNA. The developed system contains of a CMOS differential LNA and off chip micro strip antenna with the consideration of differential noise canceling (DNC) method.…”

Section: Different Control Techniquesmentioning

confidence: 99%

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

2021

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In today’s world, radio receiver system is a prevailing wireless technology in that the major part is Low Noise Amplifier (LNA) which widely used to improve weak signals in many applications with millimeter and radio frequency waves such as optical communication, multimode transceivers and measurement instrumentations. The real drawbacks of LNA is that it fails to maintain specific properties in critical conditions like as minimum power consumption, provide low noise figure, input matching and linearity. Additionally, promoted by various application demands, design methods and control methods must require to improve performance of LNA. The performance of LNA can be improved by adding extra components in basic circuit by proper arrangement for millimeter and radio frequency waves. The review paper provides information about design methodology, optimization techniques and control techniques. The different design of LNA is reviewed and analyzed such as 3-stage near-mm Wave LNA, 5-stage near-mm Wave LNA, common-gate amplifier, shunt-feedback amplifier, Resistor-terminated common-source amplifier, Traditional inductor-less amplifiers, cascode connection and double common source. This review paper also provides the information about design circuit diagram. The performance improvement of LNA can be achieved with the help of different techniques and our review based on optimization and control techniques with parameter tuning. Finally, the direction for the future study is presented based on review analysis of LNA.

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“…Broadband low-noise amplifier (LNA) is tremendously needed in the areas of optical communication, high-speed data transmission, wideband communication systems, and measurement instruments. [1][2][3][4][5][6][7][8][9][10] Since the LNA is usually used as the first functional block in abovementioned receivers, and the performance of LNA directly determines the noise characteristics and sensitivity of receivers, a broadband LNA with high gain and low noise is preferred in these systems. In low-power applications, the dc dissipation of LNA is concerned as well.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a 1.7‐ to 27.1‐GHz low‐noise amplifier

2022

Micro & Optical Tech Letters

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This letter illustrates a 1.7-to 27.1-GHz single-stage cascode low-noise amplifier (LNA) with high and flat gain response. In the presented LNA, to obtain high and flat gain response in the broad bandwidth, the Micro-strip type pHEMT is utilized as the common-source stage so as to alleviate the gain bandwidth degradation caused by parasitic parameters. Meanwhile, multiple inductive-peaking inductors are employed to enhance the gain. By optimizing the combination of several bandwidth extension techniques, the experimental results indicate that the exhibited LNA achieves high average gain up to 14.6 dB with ±1.5 dB variation, 2.4 dB typical noise figure, and 14-dBm OP 1dB in the frequency range from 1.7 to 27.1 GHz. Fabricated by using 0.15-μm GaAs pHEMT process, the presented LNA occupies a chip area of 0.96 mm 2 .broadband amplifier, GaAs pseudomorphic high electron-mobility transistor (pHEMT), gain enhancement techniques, low-noise amplifier (LNA), monolithic microwave integrated circuit (MMIC)

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A 1–40-GHz LNA MMIC Using Multiple Bandwidth Extension Techniques

Cited by 26 publications

References 10 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

Analysis and design of a 1.7‐ to 27.1‐GHz low‐noise amplifier

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