2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173)
DOI: 10.1109/rfic.2001.935682
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A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

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Cited by 8 publications
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“…The basic function of the LNA is to provide signal amplification while adding as little noise and distortion as possible to improve the overall noise figure and linearity of the front-end. In addition, a variable gain LNA (VGLNA) maximizes the overall dynamic range requirements for the receiver [1].…”
Section: Introductionmentioning
confidence: 99%
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“…The basic function of the LNA is to provide signal amplification while adding as little noise and distortion as possible to improve the overall noise figure and linearity of the front-end. In addition, a variable gain LNA (VGLNA) maximizes the overall dynamic range requirements for the receiver [1].…”
Section: Introductionmentioning
confidence: 99%
“…CMOS LNAs must also equal and surpass the low noise figure of these technologies. This work is for an active CMOS dual gain mode VGLNA design which achieves equal or better performances than the existing bipolar and BiCMOS technologies [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…This gives a complete variable-gain low noise amplifier (VGLNA) circuit. The VGLNA were realized in order to maximize the overall system dynamic range [6]. Section II and III explains the proposed method with detailed analysis including gain enhancement through inter-stage matching network and gain variation through the simple circuit respectively.…”
Section: Introductionmentioning
confidence: 99%
“…The CMOS RF chips are getting more and more attractive owing to the advantages of low cost and integration ability with baseband circuits. LNAs using CMOS process have demonstrated good gain and noise per-formance in the 5-6 GHz ISM band [I-31. Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits.…”
Section: Introductionmentioning
confidence: 99%
“…LNAs using CMOS process have demonstrated good gain and noise per-formance in the 5-6 GHz ISM band [I-31. Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits. A variable gain cascode amplifier using SiGe HBT technology has been demonstrated in [SI, however, the cascode topology is not suitable for variable-gain low noise and low voltage application [7].…”
Section: Introductionmentioning
confidence: 99%