A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

Aoki, Y.; Fujii, M.; Ohkubo, S.; Yoshida, S.; Niwa, T.; Miyoshi, Y.; Dodo, H.; Goto, N.; Hida, H.

doi:10.1109/rfic.2001.935682

Cited by 8 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The basic function of the LNA is to provide signal amplification while adding as little noise and distortion as possible to improve the overall noise figure and linearity of the front-end. In addition, a variable gain LNA (VGLNA) maximizes the overall dynamic range requirements for the receiver [1].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A 2 GHz variable gain low noise amplifier in 0.18-μm CMOS

Alam

DeGroat

2007

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

This paper describes a 2 GHz active variable gain low noise amplifier (VGLNA) in a 0.18-lm CMOS process. The VGLNA provides a 50-X input impedance and utilizes a tuned load to provide high selectivity. The VGLNA achieves a maximum small signal gain of 16.8 dB and a minimum gain of 4.6 dB with good input return loss. In the high gain and the low gain modes, the NFs are 0.83 dB and 2.8 dB, respectively. The VGLNA's IIP3 in the high gain mode is 2.13 dBm. The LNA consumes approximately 4 mA of current from a 1.8-V power supply.

show abstract

Section: Introductionmentioning

confidence: 99%

“…CMOS LNAs must also equal and surpass the low noise figure of these technologies. This work is for an active CMOS dual gain mode VGLNA design which achieves equal or better performances than the existing bipolar and BiCMOS technologies [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

A 2 GHz variable gain low noise amplifier in 0.18-μm CMOS

Alam

DeGroat

2007

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

show abstract

“…This gives a complete variable-gain low noise amplifier (VGLNA) circuit. The VGLNA were realized in order to maximize the overall system dynamic range [6]. Section II and III explains the proposed method with detailed analysis including gain enhancement through inter-stage matching network and gain variation through the simple circuit respectively.…”

Section: Introductionmentioning

confidence: 99%

An 8 GHz Variable Gain Low Noise Amplifier (VGLNA) Utilizing Parallel Inter-Stage Resonance

Lee

Jamuar

Sidek

et al. 2006

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems

View full text Add to dashboard Cite

A two-stage variable gain low noise amplifier (VGLNA) topology is proposed, which adopts a parallel interstage resonance. The characteristics of the parallel inter-stage resonance in gain enhancement are analyzed and this is then followed by the application of a simple circuit consisted of two transistors as the variable gain stage. The VGLNA is designed and simulated based on a 0.18 gm CMOS technology for 8-GHz X-band applications. Simulation results show 13.63 dB of power gain, 3.60 dB of noise figure, 4.27 dBm of 11P3 and dc power supply of 1 V with 35.67 mA current drawn.

show abstract

“…The CMOS RF chips are getting more and more attractive owing to the advantages of low cost and integration ability with baseband circuits. LNAs using CMOS process have demonstrated good gain and noise per-formance in the 5-6 GHz ISM band [I-31. Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits.…”

Section: Introductionmentioning

confidence: 99%

“…LNAs using CMOS process have demonstrated good gain and noise per-formance in the 5-6 GHz ISM band [I-31. Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits. A variable gain cascode amplifier using SiGe HBT technology has been demonstrated in [SI, however, the cascode topology is not suitable for variable-gain low noise and low voltage application [7].…”

Section: Introductionmentioning

confidence: 99%

A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier

Tsai

Liu

Lin

et al. 2003

33rd European Microwave Conference, 2003

View full text Add to dashboard Cite

Absrract -A 4.54 GHz CMOS low-voltage wideband variable gain low noise amplifier (VGLNA) with wide gain-control range has been demonstrated in this paper. The VGLNA, operating at a supply voltage as low as 1 V, achieves a small signal gain of 20 dB and 3-dB bandwidth of 1.5 GHz with good return losses. The noise figure is 3.5 dB at 5.5 GHz. A figure-of-merit for gain eficiency (Gain/PDc) of 1.23 dB/mW is achieved, which is believed to be the hest among reported results for a CMOS VGLNA operating at multi-GHz frequency.

show abstract

A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

Cited by 8 publications

References 2 publications

A 2 GHz variable gain low noise amplifier in 0.18-μm CMOS

A 2 GHz variable gain low noise amplifier in 0.18-μm CMOS

An 8 GHz Variable Gain Low Noise Amplifier (VGLNA) Utilizing Parallel Inter-Stage Resonance

A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier

Contact Info

Product

Resources

About