2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)
DOI: 10.1109/mwsym.2001.966890
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A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

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Cited by 13 publications
(4 citation statements)
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“…It also presents good stability factor for all gain values with some margin, due to its single-stage configuration, differently from recent works compared in this paper, including topologies for wideband applications with the same idea of gain variation or using different technologies as HBTs [1], but not covered in this paper.…”
Section: Discussionmentioning
confidence: 86%
“…It also presents good stability factor for all gain values with some margin, due to its single-stage configuration, differently from recent works compared in this paper, including topologies for wideband applications with the same idea of gain variation or using different technologies as HBTs [1], but not covered in this paper.…”
Section: Discussionmentioning
confidence: 86%
“…The basic function of the LNA is to provide signal amplification while adding as little noise and distortion possible to improve the overall noise figure and linearity of the front-end. In addition, variable gain LNA (VGLNA) maximizes the overall dynamic range requirements for receiver [2].…”
Section: Introductionmentioning
confidence: 99%
“…LNAs using CMOS process have demonstrated good gain and noise per-formance in the 5-6 GHz ISM band [I-31. Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits.…”
Section: Introductionmentioning
confidence: 99%
“…Variable gain low noise amplifiers (VGLNAs) were realized in order to maximize the overall system dynamic range [4]. A 1.4-dB NF variable-gain low noise amplifier using InGaP emitter HBT has been presented in [4], but GaAs-based chip is difficult to integrate with CMOS baseband circuits. A variable gain cascode amplifier using SiGe HBT technology has been demonstrated in [SI, however, the cascode topology is not suitable for variable-gain low noise and low voltage application [7].…”
Section: Introductionmentioning
confidence: 99%