We have developed a high-accuracy difference X-ray reflectivity (DXR) method using intense synchrotron radiation for the evaluation of ultrathin thermal oxides on Si(100). By carefully analyzing DXR data for gate oxides with thicknesses of 40 Å and 70 Å grown at 800° C to 1000° C, the existence of a dense ( ∼2.4 g/cm3), thin (∼10 Å) layer at the S
i
O
2/S
i interface has been revealed. The thickness of the interfacial layer decreases with increasing oxidation temperature. Oxides grown in O3 or HCl/O2 have a thinner interfacial layer compared to those grown in O2.
Articles you may be interested inEffect of Al ion implantation on the adhesion of Al films to SiO2 substrates Cell design for in situ xray scattering studies of metal/solution interfaces under electrochemical control Rev.We have developed a high-precision difference-x-ray-reflectivity technique using intense synchrotron radiation and applied this to evaluate native oxides and ultrathin thermal oxides on Si͑100͒. We have successfully evaluated the density of native oxides. Native oxides formed by HCl and NH 4 OH solutions have a low density, in contrast to the oxides formed by H 2 SO 4 solution and UV/O 3 whose densities are close to those of thermal oxides. By carefully analyzing ultrathin thermally grown oxides with thicknesses of 40 and 70 Å grown at 800-1000°C, we have revealed the existence of a dense ͑ϳ2.4 g/cm 3 ͒, thin ͑ϳ10 Å͒ layer at the SiO 2 /Si interface. Oxides grown in O 3 or HCl/O 2 have a thinner interfacial layer compared to those grown in O 2 . We have evaluated the effects of ambient and temperature at oxidation on the interfacial layer and the SiO 2 layer.
Nitrided-oxide gate dielectrics have been proposed to suppress boron penetration in deep submicron metal-oxide-semiconductor field effect transistors (MOSFETs). However, few quantitative reports have been released on how nitrided oxides enlarge the permissible thermal budget. We evaluated the diffusivities of a nitrided oxide formed by annealing SiO2 in NO gas and demonstrated that this film enables us to use BF2
+ for scaled devices. We also proposed a model depicting boron penetration through the nitrided-oxide layer.
Articles you may be interested inThermal decomposition behavior of the HfO 2 / SiO 2 / Si system J. Appl. Phys. 94, 928 (2003); 10.1063/1.1578525 Characterization of annealing effects of low temperature chemical vapor deposition oxide films as application of 4H-SiC metal-oxide-semiconductor devices Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH 4 and N 2 O
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