A 0.8V 0.8mm<sup>2</sup> bluetooth 5/BLE digital-intensive transceiver with a 2.3mW phase-tracking RX utilizing a hybrid loop filter for interference resilience in 40nm CMOS

Ding, Ming; Wang, Xiaoyan; Zhang, Peng; He, Yuming; Traferro, Stefano; Shibata, Kenichi; Song, Minyoung; Korpela, Hannu; Liu, Yao‐Hong; Bachmann, Christian; Philips, Kathleen

doi:10.1109/isscc.2018.8310376

Cited by 32 publications

(55 citation statements)

References 6 publications

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“…Reported works suggest that ULV and ULP currently stand for supply voltages under 1.0 V and RF receiver power consumption under 3.0 mW [7][8][9].…”

Section: Motivationmentioning

confidence: 99%

“…where This work contemplate the adoption of a Low-IF receiver, taking into account the benefit of avoiding DC offset and flicker noise [7,10,32] influence in the DC spectrum [8,9,11,[33][34][35][36].…”

Section: Wireless Receiver Architecture For Blementioning

confidence: 99%

“…In [7], the receiver works with zero-IF downconversion, and uses a phase-tracking architecture, where an all-digital phase-locked-loop (ADPLL) replace the analog-to-digital converter (ADC) and allows using a single signal path, instead of quadrature downconversion, thus saving power. The RF Front-End is composed by a single-ended, inverter-based LNA, and a single-balanced, current-driven passive mixer.…”

Section: State Of the Artmentioning

confidence: 99%

“…In [8], a low-IF receiver was chosen for its advantages in low power implementations, reportedly achieving attractive in-band and out-band blocker performance. It uses an ADPLL centric receiver, as in [7], with RF Front-End composed by a single-ended common-source LNA with inductive source degeneration, integrated balun to modify the signal path to differential, and a double-balanced current-driven passive mixer.…”

Section: State Of the Artmentioning

confidence: 99%

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Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Silva¹

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Este trabalho apresenta a análise, métodos de projeto e implementação de circuitos eletrônicos em tecnologia MetalÓxido Silício Complementar (CMOS) para operação em rádio frequências na banda industrial, científica e médica, seguindo o protocolo de comunicação Bluetooth Low Energy, para a banda de frequência de 2,4 GHz a 2,4835 GHz. São apresentadas as motivações atuais para o trabalho com o padrão Bluetooth Low Energy, assim como os parâmetros de performance necessários para o projeto. Este protocolo oferece um conjunto de especificações mais flexíveis, ajudando na redução da tensão de alimentação e do consumo de potência. Estão incluídas considerações sobre o trabalho com transistores de efeito de campo em MetalÓxido Silício em baixas tensões, incluindo sua operação na região de inversão fraca. Três implementações são apresentadas, com resultados ,para blocos de Amplificador de Baixo Ruído e bloco conjunto Amplificador de Baixo Ruído e Misturador de Frequências. O sinal convertido a frequência intermediáriaé analisado, assim como a operação do Amplificador de Baixo Ruído. Todos os projetos apresentados mostraram um consumo de potência abaixo de 1 mW, para tensão de alimentação 0,5 V e linearidade compatível com potências de entrada até-20 dBm.

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“…Reported works suggest that ULV and ULP currently stand for supply voltages under 1.0 V and RF receiver power consumption under 3.0 mW [7][8][9].…”

Section: Motivationmentioning

confidence: 99%

Section: Wireless Receiver Architecture For Blementioning

confidence: 99%

Section: State Of the Artmentioning

confidence: 99%

Section: State Of the Artmentioning

confidence: 99%

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Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Silva¹

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“…A smaller power dissipation, at the transmitter part, is obtained by using all-digital circuits (KUO et al, 2017;LIU et al, 2015) or operating at the ultra-low voltage range (ULV) (YIN et al, 2018). On the other hand, at the receiver (RX) part, the smaller power dissipation is obtained using modern Low-IF and Zero-IF architectures, operating with low voltage supply (ZHANG; MIYAHARA; OTIS, 2013; YI BRYANT;SJOLAND, 2014;SELVAKUMAR;LISCIDINI, 2015;DING et al, 2018;KUO et al, 2018), or by reducing the number of RF active blocks (MASUCH; DELGADO-RESTITUTO, 2013a; BRYANT; SJOLAND, 2014). The digital-intensive circuits transceivers should be implemented in advanced CMOS process (≤ 40 nm) in order to obtain faster switches and lower parasitic capacitances (KUO et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

Filtros RC-Ativo ULV e ULP combinando OTA de único estágio e transcondutância negativa de entrada para receptores RF de baixa energia.

Severo¹

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I would like to thanks to Professor Wilhelmus Adrianus Maria Van Noije for the opportunity in work as a Ph.D. candidate at the Polytechnic School of the University of São Paulo and by all the challenges imposed to me that have collaborated significantly in the improvements of my professional abilities. I would like to thanks to the Federal University of Pampa for the opportunity of being on leave from the university by 3.5 years that made possible working full time in the Ph.D. studies and to the CNPq research agency for support to this work. I would also like to thanks to professors João A. Martino e Paula G. Der Agopian for all the help in the CMOS transistor characterization, to the IMEC Free-mini@asic and to the MOSIS Educational programs for the free integrated circuit fabrications and to professors João N. Soares Júnior and Márcio C. Schneider for all the suggestions gave me at the qualification exam. I would like to thanks to all the members of the DMPSV department of the LSI at USP, especially to Silvana, for all the conversations at the coffee time and commemoration during my stay in São Paulo. Finally, I thanks to my wife Tanísia for all the help and understanding during this shortage of time phase of my life.

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Hardware Realization of DPSK-Based Bluetooth Modem

Mohamed

2021

Bluetooth 5.0 Modem Design for IoT Devices

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A 0.8V 0.8mm² bluetooth 5/BLE digital-intensive transceiver with a 2.3mW phase-tracking RX utilizing a hybrid loop filter for interference resilience in 40nm CMOS

Cited by 32 publications

References 6 publications

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Filtros RC-Ativo ULV e ULP combinando OTA de único estágio e transcondutância negativa de entrada para receptores RF de baixa energia.

Hardware Realization of DPSK-Based Bluetooth Modem

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A 0.8V 0.8mm2 bluetooth 5/BLE digital-intensive transceiver with a 2.3mW phase-tracking RX utilizing a hybrid loop filter for interference resilience in 40nm CMOS

Cited by 32 publications

References 6 publications

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Bluetooth low energy RF front-end for low-voltage applications in CMOS technology.

Filtros RC-Ativo ULV e ULP combinando OTA de único estágio e transcondutância negativa de entrada para receptores RF de baixa energia.

Hardware Realization of DPSK-Based Bluetooth Modem

Contact Info

Product

Resources

About

A 0.8V 0.8mm² bluetooth 5/BLE digital-intensive transceiver with a 2.3mW phase-tracking RX utilizing a hybrid loop filter for interference resilience in 40nm CMOS