A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient

Abstract

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65[Formula: see text]nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55[Formula: see text]V, and generates a 286[Formula: see text]mV reference voltage with a temperature coefficient of 59[Formula: see text]ppm/∘C. The circuit takes 413[Formula: see text]nA current from 0.55[Formula: see text]V supply and occupies 0.00986[Formula: see text]mm2 of active area.

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

“…The voltages V PTAT and V CTAT are generally obtained by voltage drops of either forward‐biased PN junction diode, 11–13 base‐emitter junction voltages of the BJTs, 14–29 or gate‐to‐source voltages of subthreshold MOS transistors 30–43 . The first‐order temperature‐compensated voltage reference circuits have been reported in the literature, which are formed by using diodes, BJTs, MOS transistors, or by combination of these devices 11,12,14–17,26,28–41 . The voltage reference circuit presented by Banba et al 11 uses diodes, resistors, and operational amplifier.…”

“…But, the temperature sensitivity of circuit is high. Nagulapalli et al 38 presented a voltage reference using MOS transistors. In the circuit, PTAT voltage is generated using self‐bias cascode structure whereas CTAT voltage is generated by threshold voltage of MOS transistor.…”