A 0.5-V 5.8-GHz ultra-low-power RF transceiver for wireless sensor network in 65nm CMOS

Ikeda, Sho; Lee, Sangyeop; Yonezawa, Shin; Fang, Yiming; Takayasu, Motohiro; Hamada, Taisuke; Ishikawa, Yasuhiko; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

doi:10.1109/rfic.2014.6851649

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…This is due to the difference in the transconductances of PMOS and NMOS and the asymmetric structure of the VCO 9 . This amplitude imbalance can be improved by adding a capacitor to the center‐tap point of symmetric center‐tapped inductor 10 . The capacitor effectively filters out the AC component of the voltage present at the center‐tap point which contains the amplitude imbalance term without affecting the performance parameters of the VCO such as phase noise and power consumption.…”

Section: System Overview and Circuit Designmentioning

confidence: 99%

“…9 This amplitude imbalance can be improved by adding a capacitor to the center-tap point of symmetric center-tapped inductor. 10 The capacitor effectively filters out the AC component of the voltage present at the center-tap point which contains the amplitude imbalance term without affecting the performance parameters of the VCO such as phase noise and power consumption. The differential inductor used has three turns, inductance = 994 pH and provides a quality factor of 14.05.…”

Section: System Overview and Circuit Designmentioning

confidence: 99%

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A low‐power amplitude shift keying modulator based on adaptive body‐biased injection‐locked current‐reuse voltage controlled oscillator for high data rate radio frequency identification applications

Yasir

Cao

et al. 2022

Circuit Theory & Apps

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A low-power consuming amplitude-shift keying (ASK) modulator designed in 130 nm CMOS technology and operating at 10.5 GHz frequency is presented in this work. The modulator is based on current-reuse voltage-controlled oscillator (VCO) which uses the effects of adaptive body-biasing and injection locking (IL) to achieve low-phase noise and low-power operation. The VCO has a phase noise of À106 dBc/Hz at 1 MHz offset. The ASK modulator consumes 790 μW with a 1.1 V voltage supply and draws an average current of 719 μA. For applying the bulk-biasing signal, a deep n-well NMOS is used in the PMOS-NMOS oscillator pair which isolates the substrate and avoids the current path through it. The post-layout simulation results of the 0.5 Â 0.5 mm 2 modulator IC verify its low-power, low-phase noise operation. It is intended for use in self-powered active high data rate radio-frequency identification (RFID) tags.

show abstract

Section: System Overview and Circuit Designmentioning

confidence: 99%

Section: System Overview and Circuit Designmentioning

confidence: 99%

A low‐power amplitude shift keying modulator based on adaptive body‐biased injection‐locked current‐reuse voltage controlled oscillator for high data rate radio frequency identification applications

Yasir

Cao

et al. 2022

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…However, the use of a low supply voltage makes the analog circuit design difficult because it would degrade maximum operation frequency, signal-to-noise ratio, and any other analog performance. 1,[5][6][7] In particular, the design of a voltage-controlled oscillator (VCO) is critical under a low supply voltage. VCO is a key component in a phase-locked loop (PLL), which generates carrier signals for wireless communications, and it must satisfy many requirement specifications such as power consumption, frequency tuning range and its linearity, and phase noise to maintain system performance.…”

Section: Introductionmentioning

confidence: 99%

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

Ikeda¹,

Lee²,

Ito³

et al. 2015

Jpn. J. Appl. Phys.

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In this paper, we present a voltage-controlled oscillator (VCO), which achieves highly linear frequency tuning under a low supply voltage of 0.5 V. To obtain the linear frequency tuning of a VCO, the high linearity of the threshold voltage of a varactor versus its back-gate voltage is utilized. This enables the linear capacitance tuning of the varactor; thus, a highly linear VCO can be achieved. In addition, to decrease the power consumption of the VCO, a current-reuse structure is employed as a cross-coupled pair. The proposed VCO was fabricated using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. It shows the ratio of the maximum VCO gain (KVCO) to the minimum one to be 1.28. The dc power consumption is 0.33 mW at a supply voltage of 0.5 V. The measured phase noise at 10 MHz offset is −123 dBc/Hz at an output frequency of 5.8 GHz.

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A low power current-reuse LC-VCO with an adaptive body-biasing technique

Azadmousavi

Aghdam

2018

AEU - International Journal of Electronics and Communications

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A 0.5-V 5.8-GHz ultra-low-power RF transceiver for wireless sensor network in 65nm CMOS

Cited by 5 publications

References 8 publications

A low‐power amplitude shift keying modulator based on adaptive body‐biased injection‐locked current‐reuse voltage controlled oscillator for high data rate radio frequency identification applications

A low‐power amplitude shift keying modulator based on adaptive body‐biased injection‐locked current‐reuse voltage controlled oscillator for high data rate radio frequency identification applications

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

A low power current-reuse LC-VCO with an adaptive body-biasing technique

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