A 0.18 μm 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

Freeman, G.; Ahlgren, D.; Greenberg, D.; Groves, R.; Huang, Fon-Shan; García-Vázquez, Hugo; Jagannathan, B.; Jeng, S. J.; Johnson, J. B.; Schonenberg, K.; Stein, K.; Volant, R.; Subbanna, S.

doi:10.1109/iedm.1999.824218

Cited by 18 publications

(13 citation statements)

References 4 publications

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“…SiGe 7HP technology is both a laterally and vertically scaled version of SiGe 6HP, complete with 4-6 layer full copper metallization. The intent in 7HP is to provide a vertically and laterally scaled SiGe HBT with much higher performance ( 100 GHz) than 5HP and 6HP, combined with very aggressively scaled CMOS (1.8 V, 0.11 m ) [7]. The metallurgical base width of the 7HP SiGe HBT is in the range of 40-50 nm.…”

Section: Introductionmentioning

confidence: 99%

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

Cresslex

Hamilton²,

Mullinax³

et al. 2000

IEEE Trans. Nucl. Sci.

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We present the first experimental results of the effects of 63 MeV proton irradiation on both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology. Three distinct generations of (unhardened) SiGe technology are examined. The first generation SiGe HBTs experience very minor degradation in current gain at proton fluence as high as 2 10 13 p/cm 2 . The second and third generations SiGe HBTs, however, show 60-70% degradation in current gain under similar conditions, suggesting that emitter-base spacer optimization may be required as the technology is scaled. Si nFETs from the first generation SiGe BiCMOS technology are only hard to about 40 krad equivalent gamma dose, and are limited by drain-to-source leakage along the shallow trench edge. The second generation Si nFETs, however, improve with scaling since the shallow trench is thinned, and can withstand up to 150 krad of equivalent dose.

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Section: Introductionmentioning

confidence: 99%

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

Cresslex

Hamilton²,

Mullinax³

et al. 2000

IEEE Trans. Nucl. Sci.

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“…1 Because of the large lattice mismatch between the SiGe alloy and Si, the thickness of SiGe alloys grown by a conventional method has been limited to below a critical thickness, above which dislocations start to generate. To circumvent this problem, the utilization of a graded buffer or a SiGe/Si superlattice has been proposed for the growth of strain-relaxed SiGe alloy.…”

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confidence: 99%

Effect of strain transfer on critical thickness for epitaxial layers grown on compliant substrate

Huang

2000

Applied Physics Letters

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“…1 This is made possible by the very high-frequency operation that can be achieved with SiGe HBTs, for example, values of f max up to 180 GHz and values of f T up to 210 GHz [2][3][4][5][6] have been reported. To achieve these good performances in a SiGe HBT, the SiGe layer is produced using epitaxy, which allows very thin layers to be grown with good control over layer thickness and composition.…”

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confidence: 99%

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Mitchell

Ashburn

Hemment

2002

Journal of Applied Physics

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A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045°C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between 800 and 900°C and modeled by an Arrhenius relationship with a preexponential factor of D o ϭ0.026Ϯ0.023 cm 2 /s and an activation energy of Eϭ2.59Ϯ0.36 eV. The measured diffusivity in polycrystalline silicon is Ϸ10 4 times larger than that reported for single-crystal silicon. It is hypothesised that germanium diffusion in polysilicon occurs by diffusion along grain boundaries.

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A 0.18 μm 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

Cited by 18 publications

References 4 publications

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

Effect of strain transfer on critical thickness for epitaxial layers grown on compliant substrate

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

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