A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

Orner,; Liu, Ming; Rainey, Michael D.; Stricker,; Geiss,; Gray, Harriet; Zierak,; Гордон,; Collins, '; Vignesh, Ramachandran; Hodge,; Willets,; Joseph, Joseph; Dunn,; Rieh,; Jeng,; Eld,; Freeman,; Ahlgren,

doi:10.1109/bipol.2003.1274966

Cited by 47 publications

(15 citation statements)

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“…1 The authors wish to acknowledge the staff of the Integrated Circuit Processing (ICP) Laboratory, DIMES, in particular, S. Milosavljevic, T. L. M. Scholtes, H. Schellevis, W. Wien, and J. M. W. Laros for fabrication of the test components and circuits.…”

Section: Acknowledgmentmentioning

confidence: 99%

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Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper addresses the properties of a surface-passivated (enhanced) high-resistivity silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects of conductive surface channels and their variations across the wafer related to the local oxide and silicon/silicon-dioxide interface quality are eliminated through the formation of a thin amorphous layer at the wafer surface. Without passivation, it is found that the surface channels greatly degrade the quality of passive components in HRS by masking the excellent properties of the bulk HRS substrate and by causing a spread in parameters and peak values across the wafer. Moreover, it is seen that the surface passivation leads to excellent agreement of the characteristics of fabricated components and circuits with those predicted by electromagnetic (EM) simulation based on the bulk HRS properties. This is experimentally verified for lumped (inductors and transformers) and distributed (coplanar waveguide, Marchand balun) passive microwave components, as well as for a traveling-wave amplifier, through which also the integration of transistors on HRS and the overall parameter control at circuit level are demonstrated. The results in this paper indicate the economically important possibility to transfer microwave circuit designs based on EM simulations directly to the HRS fabrication process, thus avoiding costly redesigns.Index Terms-High-resistivity silicon (HRS), inductors, Marchand balun, substrate passivation, transformers, traveling-wave amplifier (TWA).

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Section: Acknowledgmentmentioning

confidence: 99%

“…2, in which the standard deviation from the mean value is plotted for 33 dies measured over the wafer. This has been calculated as (1) where is the mean value and is the number of measured samples.…”

Section: A Transmission Linesmentioning

confidence: 99%

Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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“…Scaling of SiGe technology has also rapidly progressed, with multiple commercial SiGe BiCMOS technology platforms presently achieving 200-GHz peak f T (e.g., [7]), while facilitat- ing the merger of these SiGe HBTs, 130 nm CMOS, 5-7 layers of metal interconnect, and a full suite of passive elements, all on 200-mm Si wafers, enabling robust silicon-based monolithic RF through millimeter-wave circuit design. Recent research demonstrations of n-p-n SiGe HBTs with peak f T of 350-375 [8] and 380 GHz [9] represent the present performance records for SiGe technology.…”

Section: Introductionmentioning

confidence: 99%

Half-terahertz operation of SiGe HBTs

Krithivasan

Lei

Cressler

et al. 2006

IEEE Electron Device Lett.

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This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f T ) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 µm 2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV CEO of 1.36 V (1.47 V at 300 K), yielding an f T × BV CEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

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“…Also, system standards geared to silicon IC technology, such as Bluetooth, played to silicon's strengths and attraction as a low-cost technology for high-volume applications. Aggressive scaling of transistor dimensions from 1.0 m to 90 nm has moved the unity-gain frequency, or , up to 120 GHz [4]. These faster transistors give RF circuit designers even more freedom to innovate.…”

Section: Introductionmentioning

confidence: 99%

SiGe Radio Frequency ICs for Low-Power Portable Communication

Long

2005

Proc. IEEE

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A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

Cited by 47 publications

References 0 publications

Surface-passivated high-resistivity silicon as a true microwave substrate

Surface-passivated high-resistivity silicon as a true microwave substrate

Half-terahertz operation of SiGe HBTs

SiGe Radio Frequency ICs for Low-Power Portable Communication

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