A 0.1-1.7 GHz, 1.1dB NF low noise amplifier for radioastronomy application

Lintignat, Julien; Darfeuille, Sébastien; Barelaud, Bruno; Billonnet, Laurent; Jarry, Bernard; Mcunier, P.; Gamand, P.

doi:10.1109/emicc.2007.4412691

Cited by 5 publications

(4 citation statements)

References 3 publications

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“…However, this cannot achieve low noise, flat gain, and good input matching at the same time. Therefore, we used an original topology where the feedback is achieved by resistors and capacitance according to [52].…”

Section: Circuit Structure With Negative Feedbackmentioning

confidence: 99%

“…The emitter area of T1 is set for the best input matching and noise performance, while that of T2 is optimized for sufficient transit frequency. However, in the case introduced in [52], the feedback resistor was replaced by the RC low-pass ladder structure formed by resistors R4 to R8 and transistors T3 to T6. The reverse-polarized junctions of the transistor are used instead of capacitors to enable fine tuning of the filter by external DC voltage applied to port Vtune.…”

Section: Circuit Structure With Negative Feedbackmentioning

confidence: 99%

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Recent Advances in ASIC Development for Enhanced Performance M-Sequence UWB Systems

Galajda

Pecovsky

Sokol

et al. 2020

Sensors

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Short-range ultra-wideband (UWB) radar sensors belong to very promising sensing techniques that have received vast attention recently. The M-sequence UWB sensing techniques for radio detection and ranging feature several advantages over the other short-range radars, inter alia superior integration capabilities. The prerequisite to investigate their capabilities in real scenarios is the existence of physically available hardware, i.e., particular functional system blocks. In this paper, we present three novel blocks of M-sequence UWB radars exploiting application-specific integrated circuit (ASIC) technology. These are the integrated 15th-order M-sequence radar transceiver on one chip, experimental active Electronic Communication Committee (ECC) bandpass filter, and miniature transmitting UWB antenna with an integrated amplifier. All these are custom designs intended for the enhancement of capabilities of an M-sequence-based system family for new UWB short-range sensing applications. The design approaches and verification of the manufactured prototypes by measurements of the realized circuits are presented in this paper. The fine balance on technology capabilities (Fc of roughly 120 GHz) and thoughtful design process of the proposed blocks is the first step toward remarkably minimized devices, e.g., as System on Chip designs, which apparently allow broadening the range of new applications.

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Section: Circuit Structure With Negative Feedbackmentioning

confidence: 99%

Section: Circuit Structure With Negative Feedbackmentioning

confidence: 99%

Recent Advances in ASIC Development for Enhanced Performance M-Sequence UWB Systems

Galajda

Pecovsky

Sokol

et al. 2020

Sensors

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show abstract

“…Although commercial amplifiers in this frequency range have close to the bandwidth and the noise performance required in this application; they are not differential. MMIC based devices using different types of transistor technologies like CMOS [3], SiGe BiCMOS [4]- [6], or GaAs HEMT [7] have been presented for SKA. However, they present some constraints due to the low Q-factor of the printed inductors and the large size needed for the planar coupling capacitors, especially when working at frequencies of some hundreds of megahertz [8].…”

Section: Introductionmentioning

confidence: 99%

Design and development of low noise amplifiers for connected array phased array feeds

Ranga

Shaw

Hay

2014

2014 International Workshop on Antenna Technology: Small Antennas, Novel EM Structures and Materials, and Applications (iWAT)

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We describe analysis and design of two low-noise amplifiers (LNAs) suitable for connected array Phased Array Feeds (PAFs) operating in the 0.4 to 2 GHz frequency range. The LNAs combine single ended configurations to form balanced amplifiers with differential signal-and noise-match impedances in the order of 300Ω. Simulation results show noise temperatures of 20 K to 30 K for the 0.45 to 0.9 GHz band and 30 K to 45 K for the 0.9 to 2.0 GHz band.

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“…So, in order to control the costs of this project, there is an absolute necessity to provide the cheapest amplifiers with the best noise performance all together. Therefore, many investigations have been done with different technologies such as silicon with BiCMOS or advanced CMOS [1].…”

Section: Introductionmentioning

confidence: 99%

Low Noise Amplifier Design with Metamorphic HEMT Technology for Radioastronomy Application

Enguehard¹,

Armengaud²,

Lintignat³

et al. 2011

Proceedings of Wide Field Astronomy &Amp; Technology for the Square Kilometre Array — PoS(SKADS 2009)

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In this paper, a low noise amplifier based on a feedback topology designed thanks to an original method is presented. Because of strong constraints in terms of noise performance a meticulous method has been developed to choose the optimum transistor. This circuit achieves a 0.3-1.7 GHz bandwidth. The circuit gain is greater than 15 dB and the noise figure is lower than 1.5dB all along the bandwidth. These performances have been reached using OMMIC DOO7IH Metamorphic HEMT (MHEMT) technology.

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A 0.1-1.7 GHz, 1.1dB NF low noise amplifier for radioastronomy application

Cited by 5 publications

References 3 publications

Recent Advances in ASIC Development for Enhanced Performance M-Sequence UWB Systems

Recent Advances in ASIC Development for Enhanced Performance M-Sequence UWB Systems

Design and development of low noise amplifiers for connected array phased array feeds

Low Noise Amplifier Design with Metamorphic HEMT Technology for Radioastronomy Application

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