This paper presents a new macro modeling methodology for solid-state power amplifiers (SSPAs) and packaged transistors used in communication systems. The model topology is based on the principle of harmonic superposition recently introduced by Agilent Technologies' X-parametersTM combined with dynamic Volterra theory. The resulting multi-harmonic bilateral model takes into account the coupling effects of both short- and long-term memory in SSPAs. In this work, the behavioral model was developed from time-domain load pull and used to simulate the amplifier's response to a 16-QAM signal with specific regards to ACPR and IM3.
In this paper, a low noise amplifier based on a feedback topology designed thanks to an original method is presented. Because of strong constraints in terms of noise performance a meticulous method has been developed to choose the optimum transistor. This circuit achieves a 0.3-1.7 GHz bandwidth. The circuit gain is greater than 15 dB and the noise figure is lower than 1.5dB all along the bandwidth. These performances have been reached using OMMIC DOO7IH Metamorphic HEMT (MHEMT) technology.
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