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Solanki, G. K.; Deshpande, M. P.; Agarwal, M. K.; Patel, P. D.; Vaidya, S. N.

doi:10.1023/a:1024724922435

Cited by 42 publications

(29 citation statements)

References 4 publications

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“…The hole and electron mobilities were estimated to be 10. [8] which may be ascribed to the extra grain boundaries (GBs) scattering in our polycrystalline films, thus indicating that the efficiency of GeSe solar cells would be further enhanced through the growth of high quality GeSe thin films with large crystalline grains or effective passivation of defects at the GBs. We applied TA spectroscopy to estimate the carrier lifetime of GeSe films.…”

Section: Wwwadvelectronicmatdementioning

confidence: 98%

“…), [8] simple binary compound with fixed orthorhombic phase at room temperature, [9,10] low toxicity, and relatively earth-abundant constituents. [11][12][13][14] Additionally, the congruent sublimation feature of GeSe makes it ideal for thin film deposition through thermal sublimation, entirely compatible with conventional processing methods for CdTe thin-film solar cells.…”

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confidence: 99%

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Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Liu

Xue

et al. 2017

Adv Elect Materials

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GeSe is a promising absorber material for photovoltaic applications due to its attractive material, optical, and electrical properties as well as its low toxicity and earth abundance. The first GeSe‐based solar cell with 1.48% efficiency has been recently reported through self‐regulated rapid thermal sublimation. However, most of the fundamental physical and electronic properties of GeSe such as refractive index, dielectric constant, carrier mobility, lifetime, and diffusion length remain unclear, despite the necessity of this for the design of high‐performance GeSe solar cells. In this work, the above basic properties of GeSe are systematically studied by using spectroscopic ellipsometry, space charge limited current measurements, and transient absorption spectroscopy. These comprehensive results provide a solid foundation for the further development of GeSe solar cells.

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Section: Wwwadvelectronicmatdementioning

confidence: 98%

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confidence: 99%

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Liu

Xue

et al. 2017

Adv Elect Materials

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“…As new members of two-dimensional (2D) semiconducting materials, IVA–VIA group compounds (such as SnSe 2 and SnSe) − have attracted tremendous attention. They are considered to have great potential for applications in new-generation optoelectronics and electronics due to their earth abundance and eco-friendly properties. , In the family of IVA–VIA group compounds, as an important p-type semiconducting material, GeSe possesses a narrow band gap within 1.1–1.2 eV, which falls within the spectrum for solar cells. , Moreover, GeSe shows a high hole mobility of 128.6 cm 2 /V s and a high visible light absorption coefficient of ∼10 5 cm –1 , , implying its great potential in electronics and optoelectronics. , Furthermore, GeSe exhibits anisotropic properties (absorption, optoelectronic, carrier mobility, and so on) because of its low-symmetry crystal structure. , …”

Section: Introductionmentioning

confidence: 99%

Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity

Huang

Liu

et al. 2019

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) GeSe is an important IVA–VIA semiconductor for future applications in electronics and optoelectronics because of its high absorption coefficient, mobility, and photoresponsivity. However, the controllable synthesis of 2D GeSe flakes is still a huge problem. Here, high-quality single-crystalline ultrathin 2D GeSe flakes are synthesized by a salt-assisted chemical vapor deposition method. The flakes tend to grow along the [010] crystal orientation presenting a rectangular shape with a thickness down to 5 nm. Then, the electrical and optoelectronic properties have been systematically investigated. A thickness-dependent Schottky barrier is shown in GeSe field-effect transistors. The p-type conductivity of GeSe is mainly caused by the Ge deficiency, which is proven by a variable-temperature experiment and theoretical calculations. In addition, the phototransistors based on as-grown GeSe flakes present an ultrahigh responsivity of 1.8 × 104 A/W and an excellent external quantum efficiency of 4.2 × 106%.

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“…Interestingly, group IV monochalcogenides are more resistant to oxidation than BP [21]. These materials, such as group IV monochalcogenides, can be used in photovoltaics [22,23] and thermoelectrics [24][25][26][27][28][29][30][31]. In addition, the problem of efficient energy storage [32][33][34][35][36] and very strong piezoelectric effect [37][38][39] have received much attention.…”

Section: Introductionmentioning

confidence: 99%

Effect of Point Defects on Electronic Structure of Monolayer GeS

et al. 2021

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Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was found that the bandgap of GeS with substitutional atoms is close to that of pristine GeS, while the bandgap of GeS with Ge or S vacancies was smaller than that of pristine GeS. In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Defects affect the piezoelectric properties depending on vacancies or substitutional atoms. Especially, GeS with substitutional atoms has almost the same piezoelectric stress coefficients eij as pristine GeS while having lower piezoelectric strain coefficients dij but still much higher than other 2D materials. It is therefore concluded that Sn can effectively heal Ge vacancy in GeS, keeping high piezoelectric strain coefficients.

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Cited by 42 publications

References 4 publications

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity

Effect of Point Defects on Electronic Structure of Monolayer GeS

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