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Modelling of Cd 4 GeSe 6 –electrolyte junction for solar cell purposes

“…[1]. The band gap was determined by photoelectrochemical methods and was found to be direct with a value of 1.75 eV [2]. Furthermore this material shows good resistivity against photocorrosion [3].…”

“…The powdered and mixed source material was synthesised during a long-time annealing. The synthesis of the crystal was carried out by the chemical vapour transport technique [2].…”