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Tian, Huyong; Luo, Wenqin; Pu, Xiaotian; Ding, Aili

doi:10.1023/a:1006744606639

Cited by 13 publications

(4 citation statements)

References 12 publications

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“…In this study, Ba 0.7 Sr 0.3 TiO 3 (BST30), Ba 0.8 Sr 0.2 TiO 3 (BST20), Ba 0.9 Sr 0.1 TiO 3 (BST10), and BaTiO 3 (BT) thin films were prepared on Si(100) by a sol-gel method similarly to that described previously [13]. In the sample preparation, barium acetate Ba(CH 3 CO 2 ) 2 , strontium acetate Sr(CH 3 CO 2 ) 2 Á (1/2 H 2 O) 2 , and tetrabutyl titanate Ti(OC 4 H 9 ) 4 were used as starting materials.…”

Section: Sample Preparationmentioning

confidence: 99%

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Yang

Tian³

et al. 2002

phys. stat. sol. (a)

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Subject classification: 77.55.+f; 78.20.Ci; 81.20.Fw Stoichiometric Ba x Sr 1Àx TiO 3 (BST) thin films with various values of x were prepared on Si(100) substrates by the sol-gel method. The influence of Sr content on the structure and the optical properties was studied by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) in the UV-visible region. The measured SE spectra were analyzed with an appropriate procedure to accurately determine the thickness and the optical constants of thin films. It has been found that the optical constants of the BST films are functions of the film composition. The optical bandgap energy increases with the increasing of Sr content.

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Section: Sample Preparationmentioning

confidence: 99%

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Yang

Tian³

et al. 2002

phys. stat. sol. (a)

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“…Various groups have deposited chemical solutions of barium titanate on platinized silicon substrates in an * E-mail: jfihlefe@unity.ncsu.edu effort to develop technologies for dynamic random access memory (DRAM) [3][4][5][6]. Though low loss, high capacitance density material can be prepared on Pt surfaces, this technology is not appropriate for embedded passives given the high cost of Pt, the inherent rigidity of typical silicon substrates, and the large series resistance associated with thin Pt electrodes.…”

Section: Introductionmentioning

confidence: 99%

Copper Compatible Barium Titanate Thin Films for Embedded Passives

et al. 2005

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Barium titanate thin films have been prepared by chemical solution deposition on 18 µm thick, industry standard copper foils in the absence of chemical barrier layers. The final embodiment exhibits randomly oriented BaTiO 3 grains with diameters between 0.1 and 0.3 µm, and an equiaxed morphology. The average film thickness is 0.6 µm and the microstructure is free from secondary or interfacial phases. The BaTiO 3 films are sintered in a high temperature reductive atmosphere such that copper oxidation is avoided. Subsequent lower-temperature, higher oxygen pressure anneals are used to minimize oxygen point defects. Permittivities of 2500 are observed at zero bias and room temperature, with permittivities greater than 3000 at the coercive field. Loss tangents under 1.5% are demonstrated at high fields. The BaTiO 3 phase exhibits pronounced ferroelectric switching and coercive field values near 10 kV/cm. Temperature dependent measurements indicate a ferroelectric transition near 100 • C with very diffuse character. Combining the approaches of the multilayer capacitor industry with traditional solution processed thin films has allowed pure barium titanate to be integrated with copper. The high sintering temperature-as compared to typical film processing-provides for large grained films and properties consistent with well-prepared ceramics. Integrating BaTiO 3 films on copper foil represents an important step towards high capacitance density embedded passive components and elimination of economic constraints imparted by traditional noble metallization.

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“…Barium acetate and strontium acetate were mixed in a desired ratio of Ba/Sr, e.g., Ba 0.9 Sr 0.1 TiO 3 (90/10), then dissolved into heated acetic acid containing equimolar amounts of titanium butoxide which was stabilized by an appropriate amount of acetylacetone. Details of the sol-gel process and its use for the deposition of the ferroelectric thin films may be found elsewhere [13].…”

Section: Methodsmentioning

confidence: 99%

Determination of the optical properties of sol-gel-derived Ba_xSr_1-xTiO₃thin film by spectroscopic ellipsometry

Tian

Luo

et al. 2001

J. Phys.: Condens. Matter

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The optical properties of amorphous and polycrystalline Ba x Sr 1−x TiO 3 (BST) thin films fabricated on Si(100) substrates by a sol-gel spin-coating technique were investigated by spectroscopic ellipsometry (SE). The spectrum of the extinction coefficient k was obtained by using the refractive index and structure parameters determined by SE in the photon energy range of 2.1-5.2 eV. A fourphase fitting model was employed to describe the optical properties of the BST thin films; the spectra of their optical constants and the band gap energy E g were determined by means of optimization. In addition, the refractive index dispersion data related to the short-range-order structure of the films agreed well with the single-oscillation energy model. The dependence of the refractive index, k and E g on annealing temperature were analysed. The variation of optical band gap energy with composition was investigated by changing the content of barium in the films.

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Untitled

Cited by 13 publications

References 12 publications

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Copper Compatible Barium Titanate Thin Films for Embedded Passives

Determination of the optical properties of sol-gel-derived Ba_xSr_1-xTiO₃thin film by spectroscopic ellipsometry

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Untitled

Cited by 13 publications

References 12 publications

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Copper Compatible Barium Titanate Thin Films for Embedded Passives

Determination of the optical properties of sol-gel-derived BaxSr1-xTiO3thin film by spectroscopic ellipsometry

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Determination of the optical properties of sol-gel-derived Ba_xSr_1-xTiO₃thin film by spectroscopic ellipsometry