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Room-Temperature Growth of UV-Emitting GaN with a Hexagonal Crystal-Structure Using Photochemical Vapor Deposition

“…The values of residual stresses of GaN films with various buffer layers are listed in Table I. [21][22][23] Without a buffer layer, the residual stress was estimated to be 3.15 GPa due to the mismatch in the thermal expansion coefficients between GaN and the sapphire substrate. 22) The value of the residual stress in our sample was as low as that of a GaN film on a sapphire substrate that had a GaN buffer layer grown by MOCVD.…”

“…[21][22][23] Without a buffer layer, the residual stress was estimated to be 3.15 GPa due to the mismatch in the thermal expansion coefficients between GaN and the sapphire substrate. 22) The value of the residual stress in our sample was as low as that of a GaN film on a sapphire substrate that had a GaN buffer layer grown by MOCVD. These results confirmed that the growth of GaN film using PCVD at RT effectively relieved the thermal strain in GaN/sapphire due to the RT growth.…”