Room-Temperature Growth of UV-Emitting GaN with a Hexagonal Crystal-Structure Using Photochemical Vapor Deposition

Abstract

The room-temperature (RT) growth of ultraviolet-emitting hexagonal gallium nitride (h-GaN) on a sapphire substrate using photochemical vapor deposition (PCVD) has been demonstrated. A high photoluminescence (PL) peak at 3.47 eV was observed at 5 K, indicating a highquality crystalline structure for h-GaN. A RT PL energy peak of 3.40 eV indicated the reduction of thermal residual stresses in GaN. In addition, the RT growth resulted in the formation of dendrite-like GaN, which originated from the low kinetic energy of the precursors for migration. A high PL peak at 3.55 eV observed at 5 K in the dendrite-like GaN indicated the quantum size effect.

Room-temperature growth of high-quality ZnO nanocrystals using a dressed-photon-assisted near-field process

“…(g) XRD θ -2θ scan result of (a) ZnO nanocrystals grown using photochemical vapor deposition (PCVD). PCVD reduces the growth temperature by producing reactive radicals via the photolysis of their precursors [19]. As a result, higher position alignment can be realized due to the reduction in the thermal diffusion of the nanoparticles deposited on the substrate.…”

Room-Temperature Growth of UV-Emitting Dendritic GaN Fractal Nanostructures Using Photochemical Vapor Deposition

“…We previously reported on the room temperature (RT) growth of UV-emitting GaN using PCVD. 29,30) Here, we report observations of dendritic GaN nanostructures grown at RT using PCVD. These dendritic GaN nanostructures were similar in morphology to the DLA cluster.…”