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Schneider, Bernd; Guette, A.; Naslain, R.; Cataldi, Michel; Costecalde, A

doi:10.1023/a:1004313022769

Cited by 105 publications

(18 citation statements)

References 9 publications

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“…Some studies attain low oxygen potentials using oxygen/inert gas mixtures; other studies attain low oxygen potentials using oxygen at low total pressures. Most studies address situations where gas phase diffusion to the surface is rate limiting [4][5][6][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]; however there is one that addresses a situation where chemical reaction at the surface is rate limiting [7]. Listed here are only studies with O 2 as the oxidant; studies with other oxidants are not included in this review.…”

Section: Introductionmentioning

confidence: 99%

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Active Oxidation of SiC

2010

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Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO 2 ) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O 2 /Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO 2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O 2 /Ar and reduced total O 2 pressure cases for SiC.

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Section: Introductionmentioning

confidence: 99%

“…Schneider et al [20] have done both experiments and modeling of active and passive oxidation of SiC at low total pressures. Interestingly, they see weight loss in both regimes.…”

Section: Introductionmentioning

confidence: 99%

Active Oxidation of SiC

2010

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“…1. As is well-known, oxidation of SiC proceeds via one of two mechanisms depending on the temperature and partial pressure of oxygen (p O2 ) [33,34]. Active oxidation occurs along with evaporation of SiO(g) at high temperature and low p O2 , while passive oxidation forming SiO 2 dominates at low temperature and high p O2 .…”

Section: Solid State Electrochemical Micromachining Of β-Sicmentioning

confidence: 99%

Surface micromachining via solid electrochemical reaction on oxide ion conductors

et al. 2009

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We propose a simple and novel route for the surface microstructuring of tough materials (glassy carbon, SiC, W and Mo) through a solid electrochemical reaction at a microcontact between the oxide ion conductor and target substrate. More specifically, the surface of materials was locally oxidized by an anodic electrochemical reaction with the oxide ion conductor via the microcontact under a dc bias. Since the oxidation products of the targets were gaseous or sublimable, a fine-patterned surface was obtained as a result of the continuous consumption of the oxidation products formed at the microcontact. The success of the proposed method may stimulate such conventional applications of oxide ion conductors.

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“…76,77 The active-to-passive transition is strongly affected by the microstructure, chemical composition, and purity of the SiC materials. Schneider et al 77 indicated that the oxygen partial pressure for active-to-passive péÉÅá~ä fëëìÉ Äó dìÉëí bÇáíçêëW lêÖ~åáÅ-íç-fåçêÖ~åáÅ`çåîÉêëáçå mêçÅÉëë Ñçê mçäóãÉê-aÉêáîÉÇ`Éê~ãáÅë transition varies over 4-7 orders of magnitude. The active-topassive transitions for Si-C-O fibers, Si-C fibers, and SiC fibers are within this transition region.…”

Section: Figure 15mentioning

confidence: 99%

“…The oxidation behavior [70][71][72][73] and the active-to-passive oxidation transition [74][75][76][77] of SiC materials have been studied both theoretically and experimentally. The oxidation behavior of Si-C fibers and SiC fibers has also been well studied.…”

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confidence: 99%

SiC-Based Ceramic Fibers Prepared via Organic-to-Inorganic Conversion Process-A Review

清人¹,

聰夫

賢太郎

et al. 2006

Nippon Seramikkusu Kyokai gakujutsu ronbunshi

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Review péÉÅá~ä fëëìÉ Äó dìÉëí bÇáíçêëW lêÖ~åáÅ-íç-fåçêÖ~åáÅ`çåîÉêëáçå mêçÅÉëë Ñçê mçäóãÉê-aÉêáîÉÇ`Éê~ãáÅë pá`_~ëÉÇ`Éê~ãáÅ cáÄÉêë mêÉé~êÉÇ îá~lêÖ~åáÅíçfåçêÖ~åáÅ çåîÉêëáçå mêçÅÉëë-^oÉîáÉï ሱᑿ-ᠪᑿং၁ɟɵɃɁǺȗȚ SiC ṾɃɱɧɋȷέỺǽ۰༔ ἕ◻Several types of Si-based ceramic fibers have been prepared using an organic-to-inorganic conversion process. In this article, the preparation, microstructure, and high-temperature stability of SiC-based ceramic fibers prepared from polycarbosilane of an organosilicon polymer are reviewed. The first fiber produced was an amorphous Si-C-O fiber, next was a low-oxygen content Si-C fiber, and finally, a nearly stoichiometric SiC fiber was developed. These fibers are continuous fine fibers that have high tensile strength with high heat resistance. The pyrolytic behavior and active-passive oxidation of these fibers at high temperatures are described here. The heat resistance of these fibers increases in the order of the Si-C-O fiber, the Si-C fiber, and the SiC fiber. The hightemperature properties are dependent on the atomic arrangement and the quantity of amorphous SiC x O y and glassy carbon in the fibers. Possible applications for these fibers are as refractory materials, and as reinforcement fibers for plastics, metals, and ceramics.

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Cited by 105 publications

References 9 publications

Active Oxidation of SiC

Active Oxidation of SiC

Surface micromachining via solid electrochemical reaction on oxide ion conductors

SiC-Based Ceramic Fibers Prepared via Organic-to-Inorganic Conversion Process-A Review

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