980nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band

Abstract

A thin film based erbium doped tellurium oxide (TeO₂) waveguide amplifier producing gain from 1500nm to 1640nm when pumped at 980nm is demonstrated. At measured internal gains exceeding 14dB lasing due to end facet reflection set in producing the first tellurite waveguide laser. High gains were observed despite significant upconversion, whose impact appears to be mitigated to some extent by residual OH contamination. The device displayed no photosensitive effects from either the high pumping intensities used or the intracavity intensity at 1550nm.

Potassium double tungstate waveguides with high ytterbium concentration for optical amplification

“…Net gain of 14 dB was achieved using 5 cm long TeO2:Er 3+ waveguides by pumping at 1480 nm [49]. Similar gain figure was also obtained by pumping at 980 nm wavelength, but the gain achievable in TeO2:Er 3+ could be higher since the gain measurement at higher pump power was limited by the onset of lasing [50]. Recently, crystalline Er 3+ -doped potassium rare-earth double tungstates, KRE(WO4)2:Er 3+ waveguide with net gain per unit length of 13 dB/cm had been reported (red hexagon).…”

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

“…Such a device not only is useful as a stand-alone highly nonlinear system but can also enhance the nonlinearity of the existing Si 3 N 4 waveguides postfabrication. Together with the emerging integrated lasers and amplifiers on TeO 2 and other rare-earth media [47][48][49]24,25], this work paves the way for a monolithic TeO 2 -based nonlinear silicon photonics platform.…”

Octave-Spanning Dispersive Slot Waveguide Based Chip-Level Ultrashort Pulse Stretcher

“…In this work, to better investigate on the properties of pulse stretcher based on the designed dispersive Si3N4 slot waveguides, and to further understand the impacts of the dispersion and the nonlinearity, the amplification process is not included. Otherwise, the bandwidth constraints in the on-chip CPA system could be from the integrated amplifier, of which the best bandwidth could only cover slightly above 100 nm [49][50][51]. Moreover, the gain of integrated amplifiers, including semiconductor optical amplifiers (SOA) [49], Er-doped waveguide amplifiers [50], and quantum dot amplifiers [51], are not flat over the bandwidth.…”

“…Otherwise, the bandwidth constraints in the on-chip CPA system could be from the integrated amplifier, of which the best bandwidth could only cover slightly above 100 nm [49][50][51]. Moreover, the gain of integrated amplifiers, including semiconductor optical amplifiers (SOA) [49], Er-doped waveguide amplifiers [50], and quantum dot amplifiers [51], are not flat over the bandwidth. Octave-spanning optical parametric amplifier based on silicon-rich nitride waveguide has been proposed, which has the potential to serve as the amplifying element in the on-chip CPA system [52].…”