94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Marti, Diego; Tirelli, Stefano; Teppati, Valeria; Lugani, Lorenzo; Carlin, J.-F.; Malinverni, Marco; Grandjean, N.; Bolognesi, C.R.

doi:10.1109/led.2014.2367093

Cited by 64 publications

(19 citation statements)

References 7 publications

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“…The device with regrown ohmic contacts exhibits f t / f max of 141/232 GHz. The saturated P OUT is 1.3 W mm −1 with PAE = 12% for V ds = 9 V at a frequency of 94 GHz . This impressive result confirms the need for very thin barrier, short gates, and optimized ohmic contacts.…”

Section: High Frequency Devices With Thin Barriersmentioning

confidence: 58%

Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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Phone: þ33 493 954 200, Fax: þ33 493 958 361In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra-thin AlN barrier devices.

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Section: High Frequency Devices With Thin Barriersmentioning

confidence: 58%

Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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“…D.C. Dumka et al [156] demonstrated 13.1 dB linear gain, maximum P OUT = 34.5 dBm, output power density 7 W/mm and PAE 65.6% at 10 GHz in X band. Diego Marti et al [157] showed 6 dB linear gain, output power density 1.35 W/mm, and PAE 12% at 94 GHz in W band.…”

Section: Rf Gan Performance Si Substratementioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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“…AlInN/GaN HEMTs were fabricated on epitaxial layers deposited on a 50-mm float-zone refined HR-Si (111) substrate (10 kΩ·cm) as per [5]. The as-grown two-dimensional electron gas (2DEG) exhibited a mobility of 1,190 cm 2 /Vs and a sheet density of n s = 1.6 × 10 13 cm -2 corresponding to a sheet resistance of R SH = 328 Ω/sq.…”

Section: Mmic Technologymentioning

confidence: 99%

“…At W-band, impressive output powers have been reported for MMIC amplifiers based on GaN HEMTs grown SiC [4]. The performance of GaN-on-Si technology still lags GaN-on-SiC although single devices have shown some potential for W-band operation [5].…”

Section: Introductionmentioning

confidence: 99%

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Marti

Lugani

Carlin

et al. 2016

IEEE Electron Device Lett.

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We demonstrate W-Band MMIC amplifiers based on AlInN/GaN HEMTs grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a process design kit (PDK) generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 µm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A simulation model confirmed by experimental data revealed that performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications. Index Terms-AlInN/GaN-on-Si, HEMTs, MMIC, multistage amplifiers, W-band.

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94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Cited by 64 publications

References 7 publications

Al(Ga)N/GaN high electron mobility transistors on silicon

Al(Ga)N/GaN high electron mobility transistors on silicon

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

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