8MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Rao, Asha; Krishnan, Sheeja; Sanjeev, Ganesh; Siddappa, K.; Ullal, H.S.

doi:10.1016/j.solmat.2009.04.021

Cited by 8 publications

(3 citation statements)

References 20 publications

(20 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cu(In 1−x Ga x )Se 2 (CIGS) thin films have received considerable attention in recent years because of their application in solar cells, which have many advantages in high conversion efficiency [1,2], the possibility of low-cost production [3,4], and long-term stability [5,6]. The world-record efficiency for small-area CIGS-based thin film solar cells has recently surpassed 20% [7].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films

Liu

Zhuang

Cao

et al. 2012

International Journal of Photoenergy

View full text Add to dashboard Cite

Se-containing precursor films with two different compositions were prepared by magnetron sputtering from Cu 0.8 Ga 0.2 and In 2 Se 3 targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Cu 2−x Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Cu 2−x Se phase.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films

Liu

Zhuang

Cao

et al. 2012

International Journal of Photoenergy

View full text Add to dashboard Cite

show abstract

“…As explained by Rao et al [46], increase in I s may arise as a result of defects in the crystal lattice which act as recombination centres that reduce the lifetime of charge carriers. The high I s obtained in this work may therefore arise as a result of these defects which act as trapping centres.…”

Section: The Current-voltage Characteristics Of An Abrupt P-n Junction Diodementioning

confidence: 99%

One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe:Te semiconductors

Olusola

Salim

Dharmadasa

2016

Mater. Res. Express

View full text Add to dashboard Cite

The fabrication of a one-sided p-n hetero-junction diodes have been successfully carried out using both p-type ZnTe and n-CdS semiconductors. Chemical bath deposition (CBD) and electrodeposition (ED) techniques have been used in the deposition of n-CdS and p-ZnTe layers respectively. Before the fabrication of the one-sided p-n hetero-junction diodes, the electrical properties of glass/FTO/p-ZnTe/Al and glass/FTO/n-CdS/Au rectifying structures were separately studied using capacitancevoltage (C-V) technique so as to determine the doping density of each of the thin films. The results from C-V analyses showed that p-ZnTe is moderately doped with an acceptor density of 3.55 × 10 15 cm -3 while n-CdS is heavily doped with a donor density of 9.00 × 10 19 cm -3 . The heavy doping of n-CdS and moderate doping of p-ZnTe will make the interface between n-CdS and p-ZnTe thin films a one-sided n + p diode. Therefore, to fabricate the CdS/ZnTe hetero-structure, it was ensured that approximately same thickness of CdS and ZnTe thin films being used in the initial experiment to study the electrical properties of glass/FTO/n-CdS/Au and glass/FTO/p-ZnTe/Al were also used in the development of the one-sided n + p junction diodes to obtain more accurate results. The electronic properties of the device structure were studied using both current-voltage (I-V) and C-V measurement techniques. The I-V results show that the one-sided n + p hetero-junction diodes possess good rectifying quality with a series resistance (R s ) of 35 Ω and rectification factors (RF) exceeding 10 2.7 under dark condition. The results of the C-V analyses showed that the acceptor density of the one-sided n + p hetero-junction diode is of the order of 10 15 cm -3 while the donor density is of the order of 10 18 cm -3 .The results obtained from this analysis still showed the moderate doping of p-ZnTe and the degenerate nature of n-CdS.

show abstract

“…Another researchers [6] studied on the effects of temperature and 8MeV electron irradiation on electrical characteristics of ZnO/CdS/Cu(In,Ga)Se 2 /Mo solar cells. The short circuit current and the cell efficiency decrease as a result of increasing radiation-induced defect.…”

Section: Introductionmentioning

confidence: 99%

Effect of High Intensity Light Irradiance on CuInSe<sub>2</sub> Thin Films

Bin

Talib

Sabli

2014

AMR

View full text Add to dashboard Cite

CuInSe2 has been a good candidate for photovoltaic material due to its direct band gap and high absorption coefficient. As the stability of photovoltaic are generally dependent on the aggressive environment, i.e. sun light, the CuInSe2 thin film can degrade after long exposure of high intensity light irradiance. The present study reports on the effect of high intensity light irradiance to the electrical and optical properties of thermal evaporated CuInSe2 thin films. The thin films were exposed to light intensity of 250 W/m2, 500 W/m2, 750 W/m2, 1000 W/m2 and 1500 W/m2 using halogen lamp. We noticed an increasing trend in resistivity after light exposure at all intensities due to the increase of light-induced defects in the films which act as recombination centre for electron-hole pair. Crystallinity of CuInSe2 thin films decreases with increasing intensity of light exposure as a result of light-induce defect. CuInSe2 thin films are found to have higher optical band gap compared to reported 1.01eV due to the amorphous structure of the film and relatively higher surface roughness.

show abstract

8MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Cited by 8 publications

References 20 publications

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films

One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe:Te semiconductors

Effect of High Intensity Light Irradiance on CuInSe<sub>2</sub> Thin Films

Contact Info

Product

Resources

About

8MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Cited by 8 publications

References 20 publications

Preparation and Characterization of Cu(In,Ga)Se2Thin Films by Selenization of Cu0.8Ga0.2and In2Se3Precursor Films

Preparation and Characterization of Cu(In,Ga)Se2Thin Films by Selenization of Cu0.8Ga0.2and In2Se3Precursor Films

One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe:Te semiconductors

Effect of High Intensity Light Irradiance on CuInSe<sub>2</sub> Thin Films

Contact Info

Product

Resources

About

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films

Preparation and Characterization of Cu(In,Ga)Se₂Thin Films by Selenization of Cu_0.8Ga_0.2and In₂Se₃Precursor Films