85–440 K Temperature Sensor Based on a 4H-SiC Schottky Diode

Rao, Sandro; Benedetto, Luigi Di; Pangallo, Giovanni; Rubino, Alfredo; Bellone, Salvatore; Corte, Francesco G. Della

doi:10.1109/jsen.2016.2591067

Cited by 43 publications

(20 citation statements)

References 21 publications

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“…In this work we analyze a large set of experimental data showing that the V F vs. T J relationship can be optimized to perform an excellent linearity, allowing to easily and reliably measure the internal device temperature, without involving an external temperature sensor. The technique is developed starting from previous studies carried out on diodes of various types and sizes [28]- [31], and is here shown to be perfectly suitable also for LEDs, and further improved to make the measurement faster and the measuring circuit simpler. It is worth noting that a highly linear dependence in a wide temperature range allows the simplest experimental pre-calibration procedure of the device, which can be in fact carried out at just two temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

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A detailed study about the direct measurement of junction temperature T J of off-the-shelf power light emitting diodes (LED) is presented. The linear dependence on temperature of the voltage drop across the device terminals at a constant current is in particular exploited and fully characterized, in the temperature range from T = 35 • C to 135 • C, with tests repeated at one thousand different probe currents. The accurate experimental data, obtained on several LED samples bearing two different part numbers, are reported, showing that they exhibit a high degree of linearity in wide current ranges, a circumstance that allows for a fast and reliable calibration as sensors. The measurement error is also fully characterized in terms of repeatability and stability over time, with measurements repeated after 600, 900, 1200 and 1800 hours of applied electro-thermal stress, demonstrating that the relevant sensor parameters stabilize after a few hundred hours of operation. A full set of parameters is provided for the two device models, allowing the direct use of each LED for the self-monitoring of the junction temperature and ensure compliance with their safe operating area over time. Moreover, a procedure and a simple circuit for the real time measurement of T J , while the LED is on, are presented. The procedure does not require a stable current source, and relies instead on the application of a sub-threshold current ramp for such a short time that the change in the output light is not perceived by human eyes. INDEX TERMS LED, light emitting diodes, junction temperature, temperature sensors, diode sensors.

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Section: Introductionmentioning

confidence: 99%

“…Once the LED is calibrated, the procedure adopted hereafter allows to calculate T J by dropping the standard fixed-current approach [22], [24]- [31], and launching instead a current ramp, within an appropriate range, during which random current-voltage measurements are performed until a measurement at the desired probe current is detected.…”

Section: Introductionmentioning

confidence: 99%

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

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“…Multiple studies have been already conducted to use thermosensitive electrical parameters (TSEP) of diodes in the case of Silicon (Si) and Silicon-Carbide (SiC) devices [12]- [14]. The diode voltage drop at a low forward bias current is a widely used method due to its easy calibration and the linear variation of the diode voltage drop as a function of the operating temperature [15].…”

Section: Methodsmentioning

confidence: 99%

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Perez

Chicot

Avenas

et al. 2017

Diamond and Related Materials

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, et al.. Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter. Diamond and Related Materials, Elsevier, 2017, 78, pp.83-87. 10.1016/j.diamond.2017 Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter. However, self-heating during characterization process has been widely observed and fast and high temperature monitoring is highly desired, moreover temperature management is of high interest for device parallelization. In this article, we investigate the possibility to monolithically integrate a small area Schottky diode which will be used as temperature sensor. The diode voltage drop at a constant forward bias current will be used as a thermosensitive parameter. This voltage drop has a quasilinear variation over a temperature range (experimentally demonstrated from 300 K to 440 K in this study due to the maximum operating temperature of the experiments) at constant bias current densities between 0.25 A/cm² and 2.5 A/cm², with a sensor sensitivity of -1.6 mV/K. It is also demonstrated that this integrated temperature sensor is affected by the biasing conditions of the main Schottky diode. To perform reliable measurements, the temperature measurement must be done while the main Schottky diode is in OFF-state or the fabrication process must be modified. This integrated temperature measurement allows accurate junction temperature monitoring, offering a diamond Schottky diode operation at its best ON-state performance through an active device temperature management.

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“…The higher sensitivity of the JBS diode can be attributed to the higher ideality factor of the JBS diode compared to the SBD. Moreover, the sensitivity of p-n diodes is higher than that of Schottky diodes, and the JBS diode amalgamates the advantages of p-n and Schottky diodes [3,5]. Figure 7 presents a comparison of both R 2 and S for the SBD and JBS diodes, with different values of r at a forward current (I D1 ) of 0.4 mA.…”

Section: Sensor Linearitymentioning

confidence: 99%

“…However, the physical properties of Si devices degrade quickly under high-temperature operations, making them less suitable for such uses. Due to its properties, including a higher Schottky barrier, SiC on the other hand is a very promising candidate for temperature sensing applications in high-temperature environments or in other harsh conditions [5][6][7]. However, SiC Schottky diodes suffer from reliability problems in the Schottky contact, in addition to a considerable leakage current as temperatures rise [8].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

et al. 2020

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Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

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85–440 K Temperature Sensor Based on a 4H-SiC Schottky Diode

Cited by 43 publications

References 21 publications

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

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