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Dusza, Ján; Eschner, T.; Rundgren, K.

doi:10.1023/a:1018521930114

Cited by 22 publications

(3 citation statements)

References 13 publications

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“…The obtained value was 20.550 GPa. The Nix and Gao derived H N G value which is in good agreement with the microhardness of the β-Si 3 N 4 crystals measured at basal plane inside the polycrystalline gas pressure sintered silicon nitride ceramics (2117 ±145 kg mm −2 ) [21]. On the contrary, reduced elastic modulus E r is obtained from the analysis of the unloading curves using the Oliver and Pharr method.…”

Section: Ng Model and Present Datasupporting

confidence: 67%

Preparation of Fine-Grained Silicon-Nitride Ceramics and their Characterization by Depth-Sensing Indentation Tests

et al. 2015

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Both pressureless-sintered and dense, fine-grained silicon nitride ceramics were produced from mechanochemically activated nitride-based precursors. Scanning Electron Microscopy (SEM), Transmition Electron Microscopy (TEM), X-Ray Diffraction (XRD) and an ultra-low load microhardness tester were used to characterize these ceramics. Depth-sensing indentation (DSI) tests in the range of 200-1800 mN were performed on the silicon nitride ceramic to determine dynamic hardness (H d ) and reduced elastic modulus (Er) values. These values were deduced by analyzing the unloading segments of the DSI curves. It was found that both H d and Er exhibits a significant indentation load dependence. Nix-Gao (NG) model was used to analyze the dynamic hardness data in the calculation of the load independent hardness value.

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Section: Ng Model and Present Datasupporting

confidence: 67%

Preparation of Fine-Grained Silicon-Nitride Ceramics and their Characterization by Depth-Sensing Indentation Tests

et al. 2015

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“…Higher orientation of the c-axis of elongated grains results in higher hardness anisotropy. The anisotropy in textured Si 3 N 4 is essentially due to the intrinsic anisotropy in the hardness of β-Si 3 N 4 single crystals [178][179][180], as shown in table 11. The intrinsic hardness anisotropy reaches ∼46% for the β-Si 3 N 4 single crystal.…”

Section: Hardnessmentioning

confidence: 99%

Textured silicon nitride: processing and anisotropic properties

Zhu

Sakka

2008

Science and Technology of Advanced Materials

156

104

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Textured silicon nitride (Si 3 N 4 ) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si 3 N 4 , with emphasis on the anisotropic and abnormal grain growth of β-Si 3 N 4 , texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si 3 N 4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si 3 N 4 single crystals are presented. Various anisotropic properties of textured Si 3 N 4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si 3 N 4 with a unique microstructure composed of oriented elongated β-Si 3 N 4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the same methods as those used for textured β-Si 3 N 4 and β-Sialon.

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“…The hardness and fracture toughness of the textured Si 3 N 4 material depends, as it was expected, on the tested planes (Table 1). Accordingly, the hardness for the plane A, with an elevated amount of elongated grains, is a 6% higher than that for the plane C (15.2 versus 14.3 GPa), which is related to the superior hardness of the prismatic planes compared to the basal ones [8]. Regarding toughness response of the different surfaces, plane A is more crack propagation resistant (K IC = 6.7 MPa•m 1/2 ) than plane C (K IC = 5.9 MPa•m 1/2 ) due to the major contribution of the elongated grains that lead to toughening mechanisms such as crack bridging.…”

Section: Resultsmentioning

confidence: 85%

Processing and Properties of Highly Textured Si<sub>3</sub>N<sub>4</sub> Materials

Belmonte

Miranzo

Osendi

2007

KEM

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Textured Si3N4 materials have been fabricated by extruding ceramic pastes, containing β-Si3N4 seeds, and later densification by hot-pressing. A strong anisotropy in the microstructure of the specimens was observed, which drastically influenced their properties. The thermomechanical and tribological behavior of the textured materials were investigated. The surface perpendicular to the Si3N4 grain alignment presented higher wear resistance than the parallel one. The thermal conductivity of the material increased when the heat flux ran along the elongated Si3N4 grains.

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Untitled

Cited by 22 publications

References 13 publications

Preparation of Fine-Grained Silicon-Nitride Ceramics and their Characterization by Depth-Sensing Indentation Tests

Preparation of Fine-Grained Silicon-Nitride Ceramics and their Characterization by Depth-Sensing Indentation Tests

Textured silicon nitride: processing and anisotropic properties

Processing and Properties of Highly Textured Si<sub>3</sub>N<sub>4</sub> Materials

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